Abstract:Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

Electronic Correlation Effects and Orbital Density Wave in the Layered Compound 1T-Tas2

Modulation of electronic state in copper-intercalated 1T-TaS 2

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Electronic dispersion, correlations and stacking in the photoexcited state of 1T-TaS$_2$

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Dominant Charge Density Order in TaTe4

Flat band physics in the charge-density wave state of $1T$-TaS$_2$

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Janus Monolayer of 1T-TaSSe: A Computational Study

Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2

Interlayer charge transfer induced by electronic instabilities in the natural van der Waals hetrostructure 4H$_b$-TaS$_2$

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Atomic Visualization of the 3D Charge Density Wave Stacking in 1T-TaS 2 by Cryogenic Transmission Electron Microscopy

Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-Tas2 Superlattices

Persistent Charge-Density-Wave Order in Single-Layer TaSe2.

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Roles of the Narrow Electronic Band near the Fermi Level in 1 T − TaS 2 -Related Layered Materials

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Nature of metallic and insulating domains in the CDW system 1T-TaSe2