Abstract:Lifshitz transition was proposed to explain a change of the topology structure in a Fermi surface induced by continuous lattice deformation without symmetry breaking since 1960. It is well known that the anomalies of the kinetic coefficients (the coefficient of heat conduction and electrical conductivity, viscosity, sound absorption, etc.) are usually closely connected with the Lifshitz transition behavior. 2H-TaS2 is a typical representative to study its anomalies of temperature dependence of heat capacity, resistivity, Hall effect, and magnetic susceptibility. Its geometrical structure of the charge density wave (CDW) phase and layer number dependence of carrier-sign alternation upon cooling in the Hall measurements have not been well understood. The geometrical structure (T-Ts) of the CDW phase was predicted through first principles calculations for bulk and mono-layer 2H-TaS2. Driven by electron-lattice coupling, Ta atoms contract to form a partially gapped CDW phase. The CDW phase has a larger average interlayer separation of S-S atoms in the adjacent two layers compared with the metal phase, which results in a weaker chemical bonding among S-S atoms in the adjacent two layers and then a narrower bandwidth of the energy band. The narrower bandwidth of the energy band leads to a larger density of states (DOS) in the out-of-plane direction above the Fermi level for the CDW phase. As the Fermi level continually drops from the DOS region with a negative slope to that with a positive slope on cooling, the reversal of the p → n type carrier and the pocket-vanishing-type Lifshitz transition occur in the bulk 2H-TaS2. However, the Fermi level slightly drops by 6 meV and happens to be at the positions of pseudo band gaps, so the reduction of in-plane DOS and total DOS is responsible for the always p-type carrier in the mono-layer samples. Our CDW vector of the k-space separation between two saddle points is QSP ≈ 0.62 GK and can provide a theoretical support for the "saddle-point" CDW mechanism proposed by Rice and Scott. Our theoretical explanation gives a new understanding of both Lifshitz transition for symmetry breaking and reversal for the p-n carrier sign in the Hall measurements in various two-dimensional transition metal disulfides.

Roles of the Narrow Electronic Band near the Fermi Level in 1 T − TaS 2 -Related Layered Materials

Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS$_2$-Related Layered Materials

Modulation of electronic state in copper-intercalated 1T-TaS 2

Superconductivity and Quantum Oscillations in Ternary Weyl Semimetal TaIrTe4

Interlayer charge transfer induced by electronic instabilities in the natural van der Waals hetrostructure 4H$_b$-TaS$_2$

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Electronic Correlation Effects and Orbital Density Wave in the Layered Compound 1T-Tas2

Correlated electrons of the flat band in charge density wave state of 4Hb-TaSexS2-x

Understanding the flat band in 1 T − TaS 2 using a rotated basis

Flat band physics in the charge-density wave state of $1T$-TaS$_2$

Reconciling the bulk metallic and surface insulating state in 1 T − TaSe 2

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Dominant Charge Density Order in TaTe4

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Observation of electronic structure and electron-boson coupling in the low-dimensional superconductor Ta<sub>4</sub>Pd<sub>3</sub>Te<sub>16</sub>

Dualistic insulator states in 1T-TaS2 crystals

Understanding the flat band in 1<i>T</i>-TaS<sub>2</sub> using a rotated basis

Band insulator to Mott insulator transition in 1T-TaS$_2$

A theoretical study of Lifshitz transition for 2H-TaS2

Band insulator to Mott insulator transition in 1<i>T</i>-TaS<sub>2</sub>