Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Photodoping-modified charge density wave phase transition in WS 2 /1 T -TaS 2 heterostructure

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Phase Transition Photodetection in Charge Density Wave Tantalum Disulfide.

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Modulation of electronic state in copper-intercalated 1T-TaS 2

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Chiral charge density waves induced by Ti-doping in 1T-TaS2

Controllable Synthesis and Charge Density Wave Phase Transitions of Two-Dimensional 1T-TaS2 Crystals

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Hysteretic Electronic Phase Transitions in Correlated Charge Density Wave State of 1T-Tas2

Dynamic phase transition into a mixed-CDW state in 1$T$-TaS$_2$ via a thermal quench

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Hidden CDW States and Insulator-to-metal Transition after a Pulsed Femtosecond Laser Excitation in Layered Chalcogenide 1T-Tas 2− X Se X

Phase-resolved frequency-domain analysis of the photoemission spectra for photoexcited 1T-TaS2 in the Mott insulating charge density wave state

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction

Photoinduced charge density wave transition like a puppet on a string

Distinguishing and controlling Mottness in 1T-TaS$_2$ by ultrafast light

Subtle effect of doping on the charge density wave in TaTe<sub>2-</sub> (=0.028-0.123) crystals revealed by anisotropic transport measurements and Raman spectroscopy

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Charge Density Waves and Metal-Insulator Transition in TaSe2