Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3

Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3

Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ Heterostructure

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction

In operando cryo-STEM of pulse-induced charge density wave switching in TaS$_2$

Thermally Controlled Charge-Carrier Transitions in Disordered PbSbTe Chalcogenides

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Hysteretic Electronic Phase Transitions in Correlated Charge Density Wave State of 1T-Tas2

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Tunable Charge Density Wave in Tis3 Nanoribbons

Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-Vte2 Grown by Molecular Beam Epitaxy.

Modulating Charge Density Wave States in 1T-Tas2 by Self-Intercalation: A DFT Study

Charge‐Density‐Wave Order And Electronic Phase Transitions in a Dilute D‐Band Semiconductor

Charge Doping Induced Reversible Multistep Structural Phase Transitions and Electromechanical Actuation in Two-Dimensional 1T'-Mos2.

Light-Tunable 1T-TaS2 Charge-Density-Wave Oscillators

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Controllable Synthesis and Charge Density Wave Phase Transitions of Two-Dimensional 1T-TaS2 Crystals

Current-Driven to Thermally Driven Multistep Phase Transition of Charge Density Wave Order in 1T-TaS 2

Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-Tas2.