Abstract:This work reports the observation of threshold resistive switching and neuronal voltage oscillations in a ternary chalcogenide BaTiS3, based on a hysteretic charge‐density‐wave (CDW) phase transition in the system. Mechanisms and the implications of these findings are also discussed. The study establishes BaTiS3 as a new, promising CDW material for future electronic device applications. Phase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal‐to‐insulator or charge density wave (CDW) transitions such as VO2 and 1T‐TaS2 have demonstrated voltage oscillations due to their robust bi‐state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current‐induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS3 as a promising CDW material for future electronic device applications, especially for energy‐efficient neuromorphic computing.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature

An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Charge-density-wave resistive switching and voltage oscillations in ternary chalcogenide BaTiS3

Light-Tunable 1T-Tas2 Charge-Density-Wave Oscillators

Room Temperature Commensurate Charge Density Wave on Epitaxially Grown Bilayer 2H-Tantalum Sulfide on Hexagonal Boron Nitride.

Charge‐Density‐Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3

Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-Vte2 Grown by Molecular Beam Epitaxy.

Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ Heterostructure

Two-Dimensional Oscillatory Neural Network Based on Charge-Density-Wave Devices Operating at Room Temperature

Controlled Synthesis of Atomically Thin 1T-Tas2 for Tunable Charge Density Wave Phase Transitions

Electrically driven non-volatile resistance switching between charge density wave states at room temperature

Controllable Synthesis and Charge Density Wave Phase Transitions of Two-Dimensional 1T-TaS2 Crystals

Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction

Achieving Room‐Temperature Charge Density Wave in Transition Metal Dichalcogenide 1T‐vse2

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Hysteretic Electronic Phase Transitions in Correlated Charge Density Wave State of 1T-Tas2

In operando cryo-STEM of pulse-induced charge density wave switching in TaS$_2$

Phase Transition Photodetection in Charge Density Wave Tantalum Disulfide.