Abstract:Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Room‐Temperature van der Waals Ferromagnet Switching by Spin‐Orbit Torques

Deterministic and non-volatile switching of all-van der Waals spin-orbit torque system above room temperature without external magnetic fields

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal

Room temperature field-free switching of CoFeB/MgO heterostructure based on large-scale few-layer WTe2

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Current-induced switching of a van der Waals ferromagnet at room temperature

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in Van Der Waals Fe3GaTe2 Devices.

Current-induced deterministic switching of van der Waals ferromagnet at room temperature

Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$

Room-temperature Highly-Tunable Coercivity and Highly-Efficient Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe3GaTe2

Highly efficient room-temperature nonvolatile magnetic switching by current in Fe3GaTe2 thin flakes

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature