Dynamics of Voltage-Driven Oscillating Insulator-Metal Transitions

Yin Shi,Amy E. Duwel,Dennis M. Callahan,Yifei Sun,F. Anika Hong,Hari Padmanabhan,Venkatraman Gopalan,Roman Engel-Herbert,Shriram Ramanathan,Long-Qing Chen

DOI: https://doi.org/10.1103/physrevb.104.064308

2021-01-01

Abstract:Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a ${\text{VO}}_{\text{2}}$ device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. We derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.