Abstract:Artificial neural networks can harness stochasticity in multiple ways to enable a vast class of computationally powerful models. Electronic implementation of such stochastic networks is currently limited to addition of algorithmic noise to digital machines which is inherently inefficient; albeit recent efforts to harness physical noise in devices for stochasticity have shown promise. To succeed in fabricating electronic neuromorphic networks we need experimental evidence of devices with measurable and controllable stochasticity which is complemented with the development of reliable statistical models of such observed stochasticity. Current research literature has sparse evidence of the former and a complete lack of the latter. This motivates the current article where we demonstrate a stochastic neuron using an insulator-metal-transition (IMT) device, based on electrically induced phase-transition, in series with a tunable resistance. We show that an IMT neuron has dynamics similar to a piecewise linear FitzHugh-Nagumo (FHN) neuron and incorporates all characteristics of a spiking neuron in the device phenomena. We experimentally demonstrate spontaneous stochastic spiking along with electrically controllable firing probabilities using Vanadium Dioxide (VO$_2$) based IMT neurons which show a sigmoid-like transfer function. The stochastic spiking is explained by two noise sources - thermal noise and threshold fluctuations, which act as precursors of bifurcation. As such, the IMT neuron is modeled as an Ornstein-Uhlenbeck (OU) process with a fluctuating boundary resulting in transfer curves that closely match experiments. As one of the first comprehensive studies of a stochastic neuron hardware and its statistical properties, this article would enable efficient implementation of a large class of neuro-mimetic networks and algorithms.

Inherent stochasticity during insulator–metal transition in VO 2

Thermal-stimulated Phase Transition of Vanadium Dioxide Enabling Versatile Transduction and Smart Applications

Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors

Temporal credit assignment for one-shot learning utilizing a phase transition material

Highly repeatable nanoscale phase coexistence in vanadium dioxide films

Mott resistive switching initiated by topological defects

Stochastic IMT (insulator-metal-transition) neurons: An interplay of thermal and threshold noise at bifurcation

Near-field imaging of domain switching in in-operando VO$_{2}$ devices

Nanoelectrical Monitoring the Nonvolatile Behavior of VO2 under Multi-Field Stimulate by Conductive Atomic Force Microscopy

Origin of discrete electrical switching in chemically heterogeneous vanadium oxide crystals

Nanoelectrical monitoring the nonvolatile behavior of VO 2 under multi-field stimulate by conductive atomic force microscopy

Electrical Switching in Semiconductor-Metal Self-Assembled VO2 Disordered Metamaterial Coatings

Possible Phonon-Induced Electronic Bi-Stability in VO2 for Ultrafast Memory at Room Temperature

Artificial afferent neurons based on the metal-insulator transition of VO2

Dynamics of Voltage-Driven Oscillating Insulator-Metal Transitions

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Stochastic simulation of forming SET and RESET process for transition metal oxide-based resistive switching memory

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

X-ray Nano-imaging of a Heterogeneous Structural Phase Transition in V2O3

Switching VO2 Single Crystals and Related Phenomena: Sliding Domains and Crack Formation

Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress