Nanoelectrical monitoring the nonvolatile behavior of VO 2 under multi-field stimulate by conductive atomic force microscopy

Xionghu Xu,Lin Wang,Shubing Li,Anyang Cui,Menghan Deng,Zhangchen Hou,Kai Jiang,Liangqing Zhu,Liyan Shang,Junhao Chu,Zhigao Hu
DOI: https://doi.org/10.1016/j.matlet.2024.136236
IF: 3
2024-03-07
Materials Letters
Abstract:The ability to control the metal-insulator phase transition is crucial for future neuromorphic and memristive technologies. The key goal of this implementation is to understand and control the nanoscale mechanisms that support these two fundamental switching modalities (volatile and non-volatile states). Here, by adjusting the temperature (60 °C ) close to the metal-insulator transition temperature, external application of low voltage (1 V) and laser excitation (18.6 mw · cm -1 ) can complete the metal-insulator transition of vanadium dioxide (VO 2 ). The nonvolatile behavior of the VO 2 devices was nanoelectrically monitored using conductive atomic force microscopy (C-AFM). Using this technique, we were able to reversibly transform the local switching response from volatile to nonvolatile, providing a unique approach for nanoelectrical monitoring in phase transition materials.
materials science, multidisciplinary,physics, applied
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