Possible Phonon-Induced Electronic Bi-Stability in VO2 for Ultrafast Memory at Room Temperature

Yong Tan,Hang Zhao,Liangliang Zhang,Yan Zhang,Cunlin Zhang,Cedric Weber,Swagata Acharya,Brian Cunningham,Myrta Gruning,Kai Liu,Mark Van Schilfgaarde,Mostafa Shalaby
DOI: https://doi.org/10.1109/irmmw-thz.2019.8874246
2019-01-01
Abstract:VO 2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO 2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.
What problem does this paper attempt to address?