Tuning the Intrinsic Stochasticity of Resistive Switching in VO 2 Microresistors

Noémie Bidoul,Nicolas Roisin,Denis Flandre
DOI: https://doi.org/10.1021/acs.nanolett.4c00184
IF: 10.8
2024-05-18
Nano Letters
Abstract:Vanadium dioxide (VO(2)) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO(2) microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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