Abstract:The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits. VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, the reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high-quality VO2 in technologically important substrates. In this report, for the first time, we show the remote epitaxy of VO2 and the demonstration of a vertical diode device in a graphene/epitaxial VO2/single-crystalline BN/graphite structure with VO2 as a reconfigurable phase-change material and hexagonal boron nitride (h-BN) as an insulating layer. By diffraction and electrical transport studies, we show that the remote epitaxial VO2 films exhibit higher structural and electrical quality than direct epitaxial ones. By high-resolution transmission electron microscopy and Cs-corrected scanning transmission electron microscopy, we show that a graphene buffered substrate leads to a less strained VO2 film than the bare substrate. In the reconfigurable diode, we find that the Fermi level change and spectral weight shift along with the metal-insulator transition of VO2 could modify the transport characteristics. The work suggests the feasibility of developing a single-crystalline VO2-based reconfigurable heterostructure with arbitrary substrates and sheds light on designing novel adaptive photonics and electrical devices and circuits.

Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration

Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration (Adv. Electron. Mater. 12/2023)

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Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors

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Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu / ZrO 2 / Pt devices

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Oxide Heterostructure Resistive Memory.

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A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure.

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

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Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

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