Abstract:Although various van der Waals stacking systems for preparing multifunctional devices are reported, their complexity in fabrication and/or inflexibility in reversible operation limit the possibility of multifunctional integrations and the requirement of the fast‐growing internet of things paradigm. Here, a simple and effective rapid temperature annealing strategy for reversibly controlling and optimizing the electronic properties of MoTe2‐based heterostructure electronics is proposed/realized. Van der Waals (vdW) heterostructures—in which layered materials are purposely selected to assemble with each other—allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet‐of‐things applications. Here, an O2‐ultrasensitive MoTe2 material and an O2‐insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. The charge‐polarity control (i.e., doping and de‐doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2/SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti‐ambipolar transfer characteristics. Based on the dynamic control of the charge‐polarity properties, an inverter, output polarity controllable amplifier, p‐n diode, and ternary‐state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.

Multibridge VO2‐Based Resistive Switching Devices in a Two‐Terminal Configuration (Adv. Electron. Mater. 12/2023)

Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration

Nonvolatile Resistive Switching Memories-Characteristics, Mechanisms and Challenges

Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu / ZrO 2 / Pt devices

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

Dynamic Resistive Switching in A Three-Terminal Device Based on Phase Separated Manganites

Realizing Multimode of Resistive Switching in Single Ag/SiO2/Pt Device Via Tuning Forming Compliance Current

Reconfigurable van der Waals Ferroionic Barristor for Multifunctional Nanoelectronics

Oxide Heterostructure Resistive Memory.

Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

Multifunctional High-Performance Van Der Waals Heterostructures.

Multi-mode Resistive Switching Behaviors Induced by Modifying Ti Interlayer Thickness and Operation Scheme

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Three-terminal resistive switch based on metal/metal oxide redox reactions

Modulation of Nonlinear Resistive Switching Behavior of A Taox-Based Resistive Device Through Interface Engineering

Molecular-Scale In-Operando Reconfigurable Electronic Hardware

Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions

Recommended Methods to Study Resistive Switching Devices

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride