Abstract:Coupling between an electrochemical reaction and a functional material property has been termed electro-chemo-X, or EC-X, where X can refer to mechanical, optical, magnetic or thermal properties. Recently, our group has demonstrated a two-terminal electro-chemo-mechanical (ECM) membrane actuator operating under ambient conditions and containing a Ce 0.8 Gd 0.2 O 1.9 solid electrolyte layer sandwiched between two Gd-doped ceria/TiO x nanocomposite thin films. Reducing one nanocomposite film while oxidizing the other was observed to produce reversible volume change thereby driving membrane actuator operation. Here, we use the same electrolyte and nanocomposite layer pair (the upper one as the ion reservoir and the lower, as the active layer) to further explore the EC-X effect. We demonstrate the suitability of the nanocomposite for a three-terminal, thin film-based resistivity switch. We find that application of ±6 V (<60 kV/cm) bias to the gate terminal for two hours under ambient conditions changes the nanocomposite conductivity in the channel between the source and drain by at least 40%. When the bias is negative, the active layer remains in a more highly conductive state for approximately twenty-four hours. Impedance spectroscopy and cyclic voltammetry reveal oxygen ion migration taking place between the active layer and the reservoir. X-ray photoelectron spectroscopy indicates that, in the absence of negative gate bias, thermal oxidation of Ce +3 - > Ce +4 is similarly effective in leading to increased nanocomposite conductivity, while reduction produces the opposite effect. With the expectation that the response time can be significantly shortened, the proposed resistivity switch may be suitable for future applications such as sensors, neuromorphic computing or spintronics.

Three-terminal resistive switch based on metal/metal oxide redox reactions

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

A Gd-doped ceria/TiO x nanocomposite as the active layer in a three terminal electrochemical resistivity switch.

Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Tunable Resistive Switching Enabled by Malleable Redox Reaction in the Nano-Vacuum Gap

Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS 2 for a Neuromorphic Vision System

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Oxide Heterostructure Resistive Memory.

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Resistance Switching Memory Effect in Transition Metal Oxide Thin Films

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.

Unipolar Resistive Switch Based on Silicon Monoxide Realized by Cmos Technology

Resistive Switching in Aqueous Nanopores by Shock Electrodeposition

Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

Asymmetric transition of electrical resistance in an all-solid-state redox device with Fe3O4 and Li-ion electrolyte thin films for physical reservoir computing

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System.

Low Voltage Resistive Switching Devices Based on Chemically Produced Silicon Oxide