Abstract:In recent years, room-temperature ferroelectricity has been experimentally confirmed in a series of two-dimensional (2D) materials. Theoretically, for isolated ferroelectricity in even lower dimensions such as 1D or 0D, the switching barriers may still ensure the room-temperature robustness for ultrahigh-density non-volatile memories, which has yet been scarcely explored. Here, we show ab initio designs of 0D/1D ferroelectrics/multiferroics based on functionalized transition-metal molecular sandwich nanowires (SNWs) with intriguing properties. Some functional groups such as -COOH will spontaneously form into robust threefold helical hydrogen-bonded chains around SNWs with considerable polarizations. Two modes of ferroelectric switching are revealed: when the ends of SNWs are not hydrogen-bonded, the polarizations can be reversed via ligand reorientation that will reform the hydrogen-bonded chains and alter their helicity; when both ends are hydrogen-bonded, the polarizations can be reversed via proton transfer without changing the helicity of chains. The combination of those two modes makes the system the smallest proton conductor with a moderate migration barrier, which is lower compared with many prevalent proton-conductors for higher mobility while still ensuring the robustness at ambient conditions. This desirable feature can be utilized for constructing nanoscale artificial ionic synapses that may enable neuromorphic computing. In such a design of synaptic transistors, the migration of protons through those chains can be controlled and continuously change the conductance of MXene-based post-neuron for nonvolatile multilevel resistance. The success of mimicking synaptic functions will make such designs promising in future high-density artificial neutral systems.

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Thinnest Nonvolatile Memory Based on Monolayer H-Bn

Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition

Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Investigation of the non-volatile resistance change in noncentrosymmetric compounds

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Mott resistive switching initiated by topological defects

Coexistence of Bipolar Non-Volatile and Threshold Volatile Resistive Switching in MoS2 Nanosheets Treated by Soft Nitrogen Plasma

Transition from Nonvolatile Bipolar Memory Switching to Bidirectional Threshold Switching in Layered MoO3 Nanobelts

Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions

Resistive Switching Behaviors Mediated by Grain Boundaries in One Longitudinal Al/MoS2&PVP/ITO Device

Reversible transition between bipolar resistive switching and threshold switching in 2D layered III-VI semiconductor GaSe

0D/1D organic ferroelectrics/multiferroics for ultrahigh density integration: Helical hydrogen-bonded chains, multi-mode switching, and proton synaptic transistors