Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions

Voltage-tunable giant nonvolatile multiple-state resistance in sliding-interlayer ferroelectric h-BN van der Waals multiferroic tunnel junction

Surface Vacancy-Induced Switchable Electric Polarization and Enhanced Ferromagnetism in Monolayer Metal Trihalides.

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

Full Electrical Control of Multiple Resistance States in Van Der Waals Sliding Multiferroic Tunnel Junctions

Tunnel junctions based on interfacial 2D ferroelectrics

Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides

Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets

Tunnel junctions based on interfacial two dimensional ferroelectrics

Theoretical design of rhombohedral-stacked MoS2-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances

Giant Electroresistance in Ferroionic Tunnel Junctions

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Resistance switch in ferromagnet/spin glass/ferromagnet spin valves

Giant electrode effect on tunneling magnetoresistance and electroresistance in van der Waals intrinsic multiferroic tunnel junctions using VS2

Twistronics of Janus transition metal dichalcogenide bilayers

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Voltage Control of a Van Der Waals Spin-Filter Magnetic Tunnel Junction

Electrical switching in a magnetically intercalated transition metal dichalcogenide

Topological phases and twisting of graphene on a dichalcogenide monolayer

Giant tunneling magnetoresistance and electroresistance in α − In 2 Se 3 -based van der Waals multiferroic tunnel junctions