Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Resistance switch in ferromagnet/spin glass/ferromagnet spin valves

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Electrically Controllable Van Der Waals Antiferromagnetic Spin Valve

Thickness modulations enable multi-functional spin valves based on Van der Waals hetero-structure

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Giant Resistance Switch in Twisted Transition Metal Dichalcogenide Tunnel Junctions

Electrically switchable van der Waals magnon valves

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Spin Valve Effect Induced by Spin-Orbit Torque Switching

Current-driven magnetic resistance in van der Waals spin-filter antiferromagnetic tunnel junctions with MnBi$_2$Te$_4$

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 Van Der Waals Heterostructures.

Switching of a quantum dot spin valve by single molecule magnets

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Unique Current-Direction-Dependent ON–OFF Switching in BiSbTeSe 2 Topological Insulator-Based Spin Valve Transistors

Spin glass state in layered compound MnSb2Te4

Supramolecular Spin Valves

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Nonvolatile Voltage-Controlled Magnetization Reversal in a Spin-Valve Multiferroic Heterostructure