Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth
DOI: https://doi.org/10.1063/1.2806966
2007-08-16
Abstract:We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.
Materials Science
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