Abstract:The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance, such as giant magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR1">1</a>,<a href="/articles/s41567-019-0621-6#ref-CR2">2</a> and tunnelling magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR3">3</a>,<a href="/articles/s41567-019-0621-6#ref-CR4">4</a>, in magnetic multilayers. Recently, new types of this effect have been observed in much simpler bilayers consisting of ferromagnetic and non-magnetic thin films<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="/articles/s41567-019-0621-6#ref-CR10">10</a>. However, the magnitude of the change in resistance with magnetic field in these materials is very small, varying between 0.01 and 1%. Here, we demonstrate that non-magnetic–ferromagnetic bilayers consisting of a conducting non-magnetic InAs quantum well and an insulating ferromagnetic (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance of approximately 80% at high magnetic field, and that its magnitude can be controlled by a gate. The mechanism for this large magnetoresistance is a strong magnetic proximity effect. The spin splitting in the InAs quantum well induced by the magnetic proximity effect can be varied between 0.17 meV and 3.8 meV by varying the gate voltage. In principle, this provides a mechanism to locally access Majorana fermions in InAs-based Josephson junctions<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41567-019-0621-6#ref-CR14">14</a> and introduces a new concept of magnetic-gating spin transistors in which the non-magnetic channel current is modulated by both electrical and magnetic means.

Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device

Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers

Noncollinear Spin Valve Effect In Ferromagnetic Semiconductor Trilayers

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure

Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves.

Giant Enhancement of Spin Accumulation and Long-Distance Spin Precession in Metallic Lateral Spin Valves

Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet

Highly Ordered Nanometric Spin-Valve Arrays: Fabrication and Giant Magnetoresistance Effect

Synthesis and Magnetotransport Properties of Nanometric Spin Valve Arrays Fabricated by Electrodeposition

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

Spin Injection Based on the Spin Gapless Semiconductor(sgs)/semiconductor Heterostructures

Magnon Valve Effect Between Two Magnetic Insulators.

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Spin-valve Effect in Nanoscale Si-based Devices