Abstract:We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lateral ferromagnetic metal / semiconductor / ferromagnetic metal spin-valve devices reported so far.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to increase the magnetoresistance (MR) ratio and spin - dependent output voltage in the lateral spin - valve device. Specifically, the research aims to achieve a higher MR ratio and a larger spin - dependent output voltage by using a lateral spin - valve device with MnGa electrodes with perpendicular magnetization and a GaAs channel, thus promoting the development of practical spin transistors. ### Background problems: 1. **Application potential of spin transistors**: A spin transistor is a three - terminal device. Its source and drain are made of ferromagnetic materials and have an embedded non - volatile memory function. The drain current of this device depends not only on the gate voltage but also on the relative magnetization configuration between the source and the drain. Therefore, spin transistors can be applied to non - volatile memory cells and reconfigurable logic circuits. 2. **Existing challenges**: However, due to the conductivity mismatch problem between the ferromagnetic electrode (FM) and the semiconductor (SC) channel, the imbalance between the majority and minority spins injected into the semiconductor is very small. Therefore, in previous studies, the MR ratio of the lateral FM/SC/FM spin - valve device was usually less than 1%, and the spin - dependent output voltage was also lower than 1 mV. 3. **Limitations of existing solutions**: - Using the ferromagnetic semiconductor GaMnAs as the source and drain electrodes can suppress the conductivity mismatch problem, but due to its low Curie temperature (≤ 200 K), it is difficult for practical applications. - Using the ballistic transport mechanism can obtain a large spin - valve ratio in Si - based spin - valve devices on the nanoscale, but further improving performance faces technical challenges, such as shortening the Si channel and the technical problems of growing a high - quality thin MgO layer on the Si substrate. ### Research objectives: - **Select appropriate materials**: To overcome the above problems, the researchers selected MnGa alloy as the source and drain electrode materials. MnGa has a large perpendicular magnetic anisotropy and a high Curie temperature (about 600 K), which is suitable for nanoscale devices, and has a small lattice mismatch with the GaAs substrate, which is beneficial for epitaxial growth. - **Improve performance indicators**: By optimizing materials and structural design, the researchers hope to achieve a higher MR ratio and a larger spin - dependent output voltage to meet the needs of practical applications. ### Experimental results: - **Experimental results**: The researchers fabricated a lateral spin - valve device in which the MnGa electrodes have perpendicular magnetization and the GaAs channel length is 600 nm. The experimental results show that at 4 K, an MR ratio as high as 12% and a spin - dependent output voltage of 33 mV were obtained, which are the highest values reported so far in lateral FM/SC/FM spin - valve devices. ### Conclusions: By using MnGa electrodes with perpendicular magnetization and a GaAs channel, the researchers successfully increased the MR ratio and spin - dependent output voltage of the lateral spin - valve device, verifying that these improvements mainly come from the intrinsic spin - valve effect rather than the parasitic effect. This result provides an important step towards the realization of practical spin transistors.

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