Abstract:Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Because of the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In_{2}X_{3} (X=S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In_{2}X_{3} bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a nonvolatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In_{2}S_{3} van der Waals bilayers, and predict giant tunneling electroresistance effects and multiple nonvolatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.

Tunnel junctions based on interfacial two dimensional ferroelectrics

Tunnel junctions based on interfacial 2D ferroelectrics

Two-Dimensional Antiferroelectric Tunnel Junction

Giant Tunnel Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions Constructed with a Sc2CO2/In2Se3 Van Der Waals Ferroelectric Heterostructure

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Giant Tunnelling Electroresistance Through 2D Sliding Ferroelectric Materials.

Sliding Ferroelectric Tunnel Junctions

Two-dimensional ferroelectric tunnel junction: the case of monolayer In:SnSe/SnSe/Sb:SnSe homostructure

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

Giant Tunneling Electroresistance in 2-Din-plane Ferroelectric Tunnel Junctions Based on a Α-In2se3/cd3c2 Heterostructure

Hybrid ferroelectric tunnel junctions: State-of-the-art, challenges and opportunities

Giant Tunneling Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions with Out-of-plane Ferroelectric Polarization

High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on Two-Dimensional Α-In2se3/mote2 Van Der Waals Heterostructures

Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks

Realizing Multiple Non-Volatile Resistance States in a Two-Dimensional Domain Wall Ferroelectric Tunneling Junction.

Tunneling electroresistance effect in van der Waals ferroelectric tunnel junction based on graphene/In2Se3/MoS2/graphene heterostructure

Two-dimensional ferroelectric tunnel junction: the case of SnSe