Abstract:Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of whichprimarily transition metal oxidesare currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.

Unipolar Resistive Switch Based on Silicon Monoxide Realized by Cmos Technology

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Resistive Switches and Memories from Silicon Oxide.

Low Voltage Resistive Switching Devices Based on Chemically Produced Silicon Oxide

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Cmos Compatible Nonvolatile Memory Devices Based On Sio2/Cu/Sio2 Multilayer Films

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Unipolar Resistive Switching Effects Based on Al/ZnO/P ++ -Si Diodes for Nonvolatile Memory Applications

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated Via Nanosphere Lithography

Nonpolar Resistive Switching in Cu/SiC/Au Non-Volatile Resistive Memory Devices

Resistive Switching Behavior of Ag/Mg 0.2 Zn 0.8 O/ZnMn 2 O 4 /p + -Si Heterostructure Devices for Nonvolatile Memory Applications

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

A Novel Nitrogen-Doped SiOx Resistive Switching Memory with Low Switching Voltages

Characteristics of the Bipolar Resistive Switching Behavior in Memory Device with Au/ZnO/ITO Structure

Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructure Devices

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn2O4/p+-Si Device

Study on Resistive Switching Characteristics and Mechanisms of Cu/SiOx/TiN Structure Resistive Random Access Memory

Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device with Cu Oxidizable Electrode