Dual Resistive Switching Characteristics in Cu$_{x}$Si$_{y}$O Resistive Memory

Lingming Yang,Ying Meng,Yali Song,Yi Liu,Qing Dong,Yinyin Lin,Ryan Huang,Qingtian Zou,Jingang Wu

DOI: https://doi.org/10.1143/apex.5.111102

IF: 2.819

2012-01-01

Applied Physics Express

Abstract:Bipolar and unipolar resistive switching was alternatively obtained in CuxSiyO resistive memory by controlling the voltage polarity and current compliance during the electroforming process. The dual switching modes showed significant differences in electrical parameters, such as switching voltage, gradual/sharp RESET, and ON/OFF resistance. Analyses of current-voltage (I-V) curve fitting and temperature coefficient relationship (TCR) indicated that the conductive filament was composed of vacancies in bipolar devices but metallic Cu in unipolar devices. A possible conduction model was sketched to interpret the coexistence of dual resistive switching. (C) 2012 The Japan Society of Applied Physics