[Comparative studies of suicide and suicidal attempts in adolescence].

S. Kitamura,M. Shimizu,K. Wada,E. Kitamura,Y. Inoue,A. Yamamoto

Abstract:

What problem does this paper attempt to address?

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

M. X. Li,Jun Miao,Shen Wu,Quanlin Liu,Yinzhu Jiang,H. Yang,Lijie Qiao

DOI: https://doi.org/10.1016/j.jallcom.2012.08.135

IF: 6.2

2013-01-01

Journal of Alloys and Compounds

Abstract:Resistance random access memory of the Pt/Cu/Nb-SrZrO3/Ag/Pt structure was firstly investigated in this work. A bistable resistive switching characteristic was achieved by current-voltage measurements at room temperature. The Cu modulation layer acting as acceptors generates oxygen vacancies in SZO layer, and modify the resistive switching properties of the memory. The dominant conduction mechanism of the high resistance state (HRS) is the space-charge-limited current theory, while the low resistance state (LRS) follows the Ohmic conduction behavior. The observed resistive switching characteristics could be ascribed to the forming of conducting filaments in the Nb-doped SrZrO3 matrix during HRS/LRS. The Pt/Cu/Nb-SrZrO 3/Ag/Pt structure exhibits lower operation voltage, lower compliance current, and long retention behavior, which shows a high potential in the generation nonvolatile memory application. © 2012 Elsevier B.V. All rights reserved.
Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Pengtao Li,Ziyang Zhang,Zijian Wang,Guobin Zhang,Shengpeng Xing,Zhen Wang,Xuemeng Fan,Zhejia Zhang,Qi Luo,Yishu Zhang

DOI: https://doi.org/10.1109/icicdt63592.2024.10717633

2024-01-01

Abstract:The rapid advancement in digital technology necessitates continuous improvements in memory systems, particularly in density, speed, and energy efficiency. Traditional charge-based memory technologies are reaching their limits, making next-generation solutions crucial. In this letter, we explore dual-layer oxide memristors of $\text{SiN}_{X}$ and ZnO for applications in volatile and non-volatile resistive switching memory. We demonstrated the reversible transition between volatile and non-volatile behaviors by controlling the current compliance. In the non-volatile state, the device exhibits low set and reset voltages of 0.23 V and -0.24 V, respectively. Finally, we provided a mechanistic explanation consistent with dual-layer oxide memristors and conducted a fitting of the conduction mechanism.
[Mechanisms for the regulatory effect of prostaglandin E2/prostaglandin E receptor 4 on high mobility group box-1 protein in lipopolysaccharide-induced sepsis in mouse peritoneal macrophage].

Xiaoliang Wang,Yong Zhang,Yanna Si,Yajie Xu,Hongguang Bao,Xiao-ming Bai,J. Leng

DOI: https://doi.org/10.11817/j.issn.1672-7347.2017.08.004

2017-08-28

Abstract:OBJECTIVE To explore the effect of prostaglandin E2 (PGE2) on the expression of high mobility group box-1 protein (HMGB1) in peritoneal macrophages of septic mice and its possible mechanisms.  Methods: The mouse peritoneal macrophages were isolated and cultured by conventional methods.The model of inflammation was established by using lipopolysaccharide (LPS) to incubate with mouse peritoneal macrophages. The PGE2, prostaglandin E receptor (EP) 4 agonist, EP4 RNAi, and DN.CREB inhibitory plasmid were used to interfere with the LPS-treated mouse peritoneal macrophage. The levels of HMGB1 was determined by Western blot.  Results: Compared with LPS alone treatment, the expression of HMGB1 in peritoneal macrophages was increased obviously after 24 h by treatment with PGE2 and LPS, and it was also increased after the combined treatment of EP4 receptor agonist with LPS for 24 h (both P<0.05); compared with the PGE2+LPS treatment, the level of HMGB1 was decreased after knockdown of EP4 receptor expression (P<0.05); compared with EP4 receptor agonist +LPS treatment, there was no difference in HMGB1 levels in mice after the treatment with DN.CREB plasmid to suppress CREB function (P>0.05); compared with LPS alone treatment, the combined treatment of EP4 receptor agonist with LPS for 24 h could up-regulate the phosphorylation of epidermal growth factor receptor (EGFR) and protein kinase B (Akt) thr308 (P<0.05), which were blocked by EGFR inhibitor. Once Akt specific inhibitor was used before EP4 and LPS treatment, the expression of HMGB1 was declined (P<0.05).  Conclusion: PGE2 can up-regulate the expression of HMGB1 in sepsis of peritoneal macrophages through EP4 receptor, which may be related to the activation of EGFR/PI3K/Akt signaling pathway.
Unipolar Resistive Switching Characteristics And Scaling Behaviors In La2mo2o9 Thin Films For Nonvolatile Memory Applications

L. Hu,Geng Lin,X. Luo,Renhuai Wei,X. B. Zhu,W. H. Song,J.M. Dai,Y. P. Sun

DOI: https://doi.org/10.1063/1.4971762

IF: 2.877

2016-01-01

Journal of Applied Physics

Abstract:La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (I-R) as a function of the third harmonic coefficient (B-0) caused by Joule heating during the reset process shows scaling behavior with a power law of I-R proportional to B-0(-delta). The I-R and reset power (P-R) can also be scaled to the resistance in LRS (R-0), i.e., I-R(P-R) proportional to R-0(-alpha(beta)). The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device. Published by AIP Publishing.
Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

He-Chun Zhou,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Wen-Hua Li,Zhen-Hua Tang

DOI: https://doi.org/10.3390/nano11102705

IF: 5.3

2021-10-14

Nanomaterials

Abstract:Herein, Bi4Ti3O12 (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102 at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2, and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Bipolar Resistance Switching In High-Performance Cu/Zno : Mn/Pt Nonvolatile Memories: Active Region And Influence Of Joule Heating

Yu Chao Yang,Feng Pan,Fei Zeng

DOI: https://doi.org/10.1088/1367-2630/12/2/023008

2010-01-01

New Journal of Physics

Abstract:Manganese-doped ZnO dielectric films sandwiched between Cu and Pt electrodes were prepared and investigated for nonvolatile resistive memory applications. These structures exhibit promising bipolar resistive switching (RS) behavior with a large ON/OFF ratio (similar to 10(3)), suitable threshold voltages (1.4 and -0.7V for SET and RESET, respectively), long retention (>10(4) s at 85 degrees C) and low write current (10 mu A). A study on the ZnO : Mn thickness dependence of threshold voltages reveals that RS should be an interfacial effect rather than bulk behavior. By elevating current compliance during the SET process, an anomalous transition from bistable memory switching to monostable threshold switching was observed, which is attributed to the instability of conductive filaments induced by Joule heating effects. Apart from this, fast voltage sweep cycles without efficient heat dissipation were also found to accelerate the hard dielectric breakdown of the device, reflecting the impact of accumulative Joule heating. These results reveal the possible influences of Joule heating effects on bipolar resistance switching and thus the necessity of avoiding them in future high-density memory applications. Conceivable solutions are considered to be reducing the operating currents and improving the heat dissipation of memory devices based on our experiments.
Bipolar Resistive Switching in Cu/Aln/Pt Nonvolatile Memory Device

C. Chen,Y. C. Yang,F. Zeng,F. Pan

DOI: https://doi.org/10.1063/1.3483158

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.
Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Jiajia Qin,Bai Sun,Shuangsuo Mao,Yusheng Yang,Mingnan Liu,Zhaowei Rao,Chuan Ke,Yong Zhao

DOI: https://doi.org/10.1016/j.mtcomm.2023.106770

IF: 3.8

2023-08-02

Materials Today Communications

Abstract:Low dimensional nanomaterials have distinctive physical, chemical, and electrical characteristics, which have led to their widespread use in the preparation of sensors, optoelectronic devices, and nonvolatile memory devices in recent years. MoO 3 nanomaterials are transition metal oxides with high work functions and broadband gaps, which have potential applications in electronic, electrochromic, and battery devices. In this work, Ag/MoO 3 /Ti memristive device was prepared by annealing MoO 3 nanospheres, which can improve resistive switching (RS) behavior. In other words, one-dimensional (1D) MoO 3 nanorods with uniform size and dense connections was obtained by annealing MoO 3 nanospheres at 300 °C. The RS behavior of the Ag/MoO 3 /Ti memristor presents obvious nonvolatile memory characteristics with larger resistance window at room temperature. In particular, the device shows N-type negative differential resistance (NDR) effect at relatively high positive voltage region. Based on the obtained data, the RS behavior conduction mechanism of the Ag/MoO 3 /Ti device was discussed by establishing physical models of Ohmic conduction and Schottky emission. This work establishes the foundation for further understanding the working mechanisms of memristors and exploring potential applications of low dimensional material based memristors.

materials science, multidisciplinary
Memory device based on a nano-granulars and nano-worms structured MoS 2 active layer: The origin of resistive switching characteristics

Shubham Sharma,Davinder Kaur

DOI: https://doi.org/10.2139/ssrn.4644348

IF: 4

2024-01-16

Vacuum

Abstract:This study systematically demonstrates resistive switching (RS) functionality of MoS 2 nanostructured [nano-granulars (NGs) and nano-worms (NWs)] based non-volatile resistive random access memory (ReRAM) device. Interestingly, the SET and RESET voltage sharply changes from NGs to NWs device. The RS behavior of devices is interpreted by proposing and discussing a model. In the Ag/MoS 2 (NGs)/ITO device, a high resistance state (HRS) and low resistance state (LRS) could be ascribed due to the formation/disruption of conducting filament via trapping-detrapping of electrons across the NGs active layer. In contrast, the RS behavior of Ag/MoS 2 (NWs)/ITO device is caused by forming of an Ag metallic filamentary route between the electrodes. The NWs structured device show substantially better endurance and homogeneity than the device with an NGs structure. This nanostructural-dependent device functionality allows extended RS properties and establishes a relationship between the material's nano-level structural and electrical features.

materials science, multidisciplinary,physics, applied
Cu x S nanosheets with controllable morphology and alignment for memristor devices

Jian Biao Chen,Kai Zhang,Zi Jin Jiang,Li Ye Gao,Jiang Wen Xu,Jiang Tao Chen,Yun Zhao,Yan Li,Cheng Wei Wang

DOI: https://doi.org/10.1088/1361-6528/ac5ca4

IF: 3.5

2022-03-25

Nanotechnology

Abstract:Abstract In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For this reason, to optimize ions migration paths in the dielectric layer itself in the Al/Cu x S/Cu structure, uniform Cu x S nanosheets films have been synthesized using anodization for various time spans. And the Al/Cu x S/Cu devices show a low operating voltage of less than 0.3 V and stable RS performance. At the same time, a reversible negative differential resistance (NDR) behavior is also demonstrated. And then, the mechanism of repeatable coexistence of RS effect and NDR phenomenon is investigated exhaustively. Analyses suggest that the combined physical model of space-charge limited conduction mechanism and conductive filaments bias-induced migration of Cu ions within the Cu x S dielectric layer is responsible for the RS operation, meanwhile, a Schottky barrier caused by copper vacancy at the Cu x S/Cu interface is demonstrated to explain the NDR phenomenon. This work will develop a new way to optimize the performance of non-volatile memory with multiple physical attributes in the future.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Stable Nonpolar Resistive Switching Characteristics in Cu/Cu-dispersed ZrO2/Pt Memory Devices

Gang Du,Zhian Chen,Qinan Mao,Zhenguo Ji

DOI: https://doi.org/10.1063/1.4977942

IF: 4

2017-01-01

Applied Physics Letters

Abstract:In this study, stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt electrochemical metallization (ECM) memory devices were reported by dispersing metallic Cu into the ZrO2 matrix. Reversible transition among different switching modes can be realized simply by modulating the polarities and magnitudes of the voltages. Moreover, improved uniformity with lower switching voltages and forming-free behaviors were also demonstrated in this device. The experiment results confirmed that metallic Cu clusters were penetrated into the ZrO2 matrix during the annealing process, which would function as an effective cation source responsible for the nonpolar RS switches. These results suggest that controlling the distribution state of active metal atoms in ECM stacks is a feasible approach for reliable memory applications.
Switching Mechanism Transition Induced by Annealing Treatment in Nonvolatile Cu/Zno/Cu/Zno/Pt Resistive Memory: from Carrier Trapping/Detrapping to Electrochemical Metallization

Y. C. Yang,F. Pan,F. Zeng,M. Liu

DOI: https://doi.org/10.1063/1.3273329

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher R-off/R-on ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.
Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Zheng Wang,Wei Xiao,Huiyong Yang,Shengjie Zhang,Yukun Zhang,Kai Sun,Ting Wang,Yujun Fu,Qi Wang,Junyan Zhang,Tsuyoshi Hasegawa,Deyan He

DOI: https://doi.org/10.1021/acsami.1c19364

2021-12-27

Abstract:Ion-based memristive switching has attracted widespread attention from industries owing to its outstanding advantages in storage and neuromorphic computing. Major issues for achieving brain-inspired computation of highly functional memory in redox-based ion devices are relatively large variability in their operating parameters and limited cycling endurance. In some devices, volatile and nonvolatile operations often replace each other without changing operating conditions. To address these issues, it is important to observe directly what is happening in repeated operations. Herein, we use a planar device that enables direct capturing of microscopic behaviors in the nucleation and growth of metal whiskers under repeated switching to verify the microscopic origin of the large parameter variability. We report direct observations that reveal the physical origin for the large cycle-to-cycle and device-to-device variability in memristive switching, which was achieved using planar polymer atomic switches with a gap >1 μm. We find that the deposition location of metal atoms is closely related to the crystallinity of the ion transport layer (solid polymer electrolyte, SPE). The filament variability (shape, position, quantity, etc.) during different cycles and devices is indeed the main reason for the observed variability in the operating characteristics. The results shed unique light on the complexity of the operation of the ion device, that is, the evolution of the dielectric layer and metal filament must be considered.

materials science, multidisciplinary,nanoscience & nanotechnology
In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Di Zhang,Rohan Dhall,Matthew M. Schneider,Chengyu Song,Hongyi Dou,Sundar Kunwar,Natanii R. Yazzie,Jim Ciston,Nicholas G. Cucciniello,Pinku Roy,Michael T. Pettes,John Watt,Winson Kuo,Haiyan Wang,Rodney J. McCabe,Aiping Chen

2024-10-31

Abstract:Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of the novel interface-type devices. In this work, we fabricate a metal/TiOx/TiN/Si (001) thin film memristor by using a one-step pulsed laser deposition. In situ transmission electron microscopy (TEM) imaging and current-voltage (I-V) characteristic demonstrate that the device is switched between high resistive state (HRS) and low resistive state (LRS) in a bipolar fashion with sweeping the applied positive and negative voltages. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charged defects (such as oxygen vacancies) can migrate along the intrinsic grain boundaries of TiOx insulating phase under electric field without forming obvious conductive filaments, resulting in the modulation of Schottky barriers at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a novel perspective on RS processes and opens up new technological opportunities for fabricating ultra-low-energy nitride-based memristive devices.

Applied Physics,Materials Science
Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Xiaoyi Lei,Xiaoya Zhu,Hao Wang,Yang Dai,Han Zhang,Chunxue Zhai,Shulong Wang,Junfeng Yan,Wu Zhao

DOI: https://doi.org/10.1016/j.jallcom.2023.172443

IF: 6.2

2023-10-12

Journal of Alloys and Compounds

Abstract:Resistive random access memory (RRAM) is one of strong candidates for future memory technology. The volatile and nonvolatile properties of devices are important foundations for the construction of neuromorphic hardware systems, which still represents a challenge. In this study, we fabricated the Cu/MoS 2 /ITO RRAM by RF magnetic sputtering with different thicknesses of MoS 2 thin films, and explored the possibility of obtaining the nonvolatile and volatile memristive effects of RRAM devices through different operating voltages. By systematically investigating the resistive switching (RS) characteristics, we proposed and discussed the nonvolatile and volatile conceptual models to elaborate on the RS mechanism of the fabricated devices. The nonvolatile and volatile behaviors were explained respectively by the forming and breaking of Cu conductive filaments between Cu and ITO , and the trapping and de-trapping of electrons leading to the change of the Schottky barrier at the ITO/MoS 2 interface.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Unipolar Resistive Switching and Mechanism in Gd-doped-TiO2-based Resistive Switching Memory Devices

L. F. Liu,Y. S. Chen,J. F. Kang,Y. Wang,D. D. Han,X. Y. Liu,X. Zhang

DOI: https://doi.org/10.1088/0268-1242/26/11/115009

IF: 2.048

2011-01-01

Semiconductor Science and Technology

Abstract:Gd-doped-TiO2-based resistive switching random-access memory (RRAM) devices with MOM structure of top metal electrode (W, Ti)/Gd-doped-TiO2/Pt/Ti/SiO2/Si were fabricated, and resistive switching characteristics were investigated. The W/Gd-doped-TiO2/Pt RRAM device showed typical unipolar resistive switching behavior irrespective of the bias polarity on the W top electrode. However, no unipolar switching was observed in the Ti/Gd-doped-TiO2/Pt devices when positive bias was applied on the Ti top electrode. A new resistive switching model was proposed to explain the unipolar switching behavior in the W/Gd-doped-TiO2/Pt RRAM device, based on the formation and destruction of conducting filaments which result from pinning and unpinning effects of surface trap states of oxide film on the Fermi level of metal electrode. The model clearly elucidates the mechanism of the low resistance state (LRS) and the high resistance state (HRS) as well as the switching behavior between LRS and HRS in the W/Gd-doped-TiO2/Pt RRAM device. The model also indicates the important role of the metal electrode material in unipolar resistive switching of oxide-based RRAM devices.
Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices

Yen‐Jung Chen,Hung‐Yang Lo,Chun‐Chien Chiu,Che‐Hung Wang,Jan‐Chi Yang,Jui‐Yuan Chen,Wen‐Wei Wu

DOI: https://doi.org/10.1002/sstr.202400019

IF: 15.9

2024-03-19

Small Structures

Abstract:LaCoOx‐based resistive random‐access memory exhibits excellent electrical behavior, including retention characteristics and good reproducibility. This ternary metal oxide layer undergoes a perovskite–brownmillerite topotactic phase transformation from LaCoO2.5 or LaCoO2.67 to highly conductive LaCoO3 regions, indicating structural evolution and oxygen ion migration. It is also considered a promising candidate for novel memory materials. Resistive random‐access memory (RRAM) is considered the next‐generation nonvolatile memory owing to its simplicity, low power consumption, and high storage density. Resistive switching (RS) occurs in a wide range of materials among the transition metal oxides. Herein, an epitaxial ternary metal oxide layer, LaCoOx (LCO), grown on Nb‐doped SrTiO3 substrates, is utilized as an RRAM device. When voltage is applied, it exhibits excellent RS behavior. More than 900 cycles are obtained, and the retention time reaches up to 104 s. To investigate the RS behavior, high‐resolution transmission electron microscopy and atomic‐scale scanning transmission electron microscopy are used to observe the structural evolution and oxygen ion migration in LCO. The structure exhibits a perovskite–brownmillerite topotactic phase transformation from LaCoO2.5 or LaCoO2.67 to the LaCoO3 conductive regions. The reversible transition between the low‐resistance states and high‐resistance states enables the RS mechanism. Additionally, the valence states are confirmed using high‐resolution X‐ray photoelectron spectroscopy. This study not only illustrates the oxygen‐ion migration mechanism of LCO but also demonstrates its suitability for RRAM applications.
Protons: Critical Species for Resistive Switching in Interface‐Type Memristors

Sundar Kunwar,Chase Bennett Somodi,Rebecca A. Lalk,Bethany X. Rutherford,Zachary Corey,Pinku Roy,Di Zhang,Markus Hellenbrand,Ming Xiao,Judith L. MacManus‐Driscoll,Quanxi Jia,Haiyan Wang,J. Joshua Yang,Wanyi Nie,Aiping Chen

DOI: https://doi.org/10.1002/aelm.202200816

IF: 6.2

2022-10-20

Advanced Electronic Materials

Abstract:Metal/Nb:SrTiO3 Schottky devices exhibit interface‐controlled resistive switching (RS) characteristics with high on/off ratios, good memory retention, and high endurance cycles. This work reveals that the RS and Schottky barrier modulation are dominantly controlled by protons (from ambient moisture) assisted charge trapping/detrapping processes at the metal/Nb:SrTiO3 interface. Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Although the switching mechanisms of memristors have been widely studied in filament‐type devices, they are largely unknown in IT memristors. In this work, using the simple Au/Nb:SrTiO3 (Nb:STO) as a model Schottky system, it is identified that protons from moisture are key element in determining the RS characteristics in IT memristors. The Au/Nb:STO devices show typical Schottky interface controlled current–voltage (I–V) curves with a large on/off ratio under ambient conditions. Surprisingly, in a controlled environment without protons/moisture, the large I–V hysteresis collapses with the disappearance of a high resistance state (HRS) and the Schottky barrier. Once the devices are re‐exposed to a humid environment, the typical large I–V hysteresis can be recovered within hours as the HRS and Schottky interface are restored. The RS mechanism in Au/Nb:STO is attributed to the Schottky barrier modulation by a proton assisted electron trapping and detrapping process. This work highlights the important role of protons/moisture in the RS properties of IT memristors and provides fundamental insight for switching mechanisms in metal oxides‐based memory devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Yong Huang,Jiahao Yu,Yu Kong,Xiaoqiu Wang

DOI: https://doi.org/10.1039/d2ra05483c

IF: 4.036

2022-01-01

RSC Advances

Abstract:The advent of memristors and the continuing research and development in the field of brain-inspired computing could allow realization of a veritable "thinking machine". In this study, ZnO-based memristors were fabricated using a radio frequency magnetron sputtering method. The ZnO oxide layer was prepared by incorporating silver nanocrystals (NCs). Several synaptic functions, nonlinear transmission characteristics, short-term potentiation, long-term potentiation/depression, and pair-pulse facilitation, were imitated in the memristor successfully. Furthermore, the transition from synaptic behaviors to bipolar resistive switching behaviors of the device was also observed under repeated stimulus. It is speculated that the switching mechanism is due to the formation and rupture of the conductive Ag filaments and the corresponding electrochemical metallization. The experimental results demonstrate that the Ag/Ag:ZnO/Pt memristor with resistive switching and several synaptic behaviors has a potential application in neuromorphic computing and data storage systems.
Bipolar Resistive Switching Behaviors of Ag/Si(3)N(4)/Pt Memory Device

B. Sun,L. F. Liu,Y. Wang,D. D. Han,X. Y. Liu,R. Q. Han,J. F. Kang

DOI: https://doi.org/10.1109/icsict.2008.4734697

2008-01-01

Abstract:The resistive switching behavior of Ag/Si(3)N(4)/Pt device was observed and studied for the first time. Resistance ratio larger than 4*10(2) and 10(4)s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si(3)N(4)/Pt devices.

[Comparative studies of suicide and suicidal attempts in adolescence].

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

[Mechanisms for the regulatory effect of prostaglandin E2/prostaglandin E receptor 4 on high mobility group box-1 protein in lipopolysaccharide-induced sepsis in mouse peritoneal macrophage].

Unipolar Resistive Switching Characteristics And Scaling Behaviors In La2mo2o9 Thin Films For Nonvolatile Memory Applications

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

Bipolar Resistance Switching In High-Performance Cu/Zno : Mn/Pt Nonvolatile Memories: Active Region And Influence Of Joule Heating

Bipolar Resistive Switching in Cu/Aln/Pt Nonvolatile Memory Device

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Memory device based on a nano-granulars and nano-worms structured MoS 2 active layer: The origin of resistive switching characteristics

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Stable Nonpolar Resistive Switching Characteristics in Cu/Cu-dispersed ZrO2/Pt Memory Devices

Switching Mechanism Transition Induced by Annealing Treatment in Nonvolatile Cu/Zno/Cu/Zno/Pt Resistive Memory: from Carrier Trapping/Detrapping to Electrochemical Metallization

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Unipolar Resistive Switching and Mechanism in Gd-doped-TiO2-based Resistive Switching Memory Devices

Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Bipolar Resistive Switching Behaviors of Ag/Si(3)N(4)/Pt Memory Device