A CMOS Compatible 1&#x00d7;3 Optical Switch Based on Silicon on Insulator

Wanjun Wang,Yong Zhao,Yubo Li,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/group4.2010.5643379

2010-01-01

Abstract:A 1×3 optical switch is demonstrated utilizing the 0.8-μm standard CMOS technology. Extinction ratios higher than 21dB are obtained for three states. It is with low power consumption (~7.4mW) and switching time (~15.3ns).

What problem does this paper attempt to address?

CMOS-Compatible 1 $\times$ 3 Silicon Electrooptic Switch with Low Crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/lpt.2011.2132757

IF: 2.6

2011-01-01

IEEE Photonics Technology Letters

Abstract:A 1 × 3 Mach-Zehnder-based electrooptic switch in silicon is presented, which employs only two p-i-n phase shifters and possess a simple control manner. Average crosstalk level and extinction ratio are -21.9 and 22.9 dB, respectively, at 1550-nm wavelength. The influences of free carrier absorption (FCA) and fabrication error on the crosstalk of the switch are analyzed according to the theory and experimental results.
Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Wanjun Wang,Yong Zhao,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/acpc.2012.as3b.4

2012-01-01

Abstract:In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch.
Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Wanjun Wang,Haifeng Zhou,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/OL.37.002307

IF: 3.6

2012-01-01

Optics Letters

Abstract:We report on an experimental 3 x 3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1 x N and N x N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3 x 3 switching functionality is demonstrated at a wavelength of 1.55 mu m, with an average cross talk of -11.1 dB and a power consumption of 97.5 mW. (C) 2012 Optical Society of America
Fabrication of Silicon Photonic Devices by Utilizing Industrial CMOS Technology

Yong Zhao,Haifeng Zhou,Wanjun Wang,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1117/12.840469

2009-01-01

Abstract:Using 0.8μm industrial CMOS technology, a 1×2 optical switch based on the carrier dispersion effect was fabricated. The device employed the conventional P-I-N structure with a typical 1μm-wide waveguide. The main process flow is presented in detail. The switching extinction ratio and the speed of the 1×2 switch are 21dB and 20ns, respectively. The fabrication repeatability is stable and reliable.
Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Xiaoqing Guo,Gencheng Wang,Tingge Dai,Bei Chen,Yuehai Wang,Hui Yu,Zhenhui Li,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2019.2896439

IF: 2.6

2019-01-01

IEEE Photonics Technology Letters

Abstract:We demonstrate a reconfigurable 4 × 4 silicon optical switch network by using an architecture of Half-Crossbar. It has the advantage of flexible scalability and utilizes fewer elements. The proposed switch is composed of six dual-microring resonators tuned by the thermo-optic effect. The footprint is only 176 μm × 632 μm. At the wavelength of 1557 nm, the average insertion loss is smaller than 2.5 dB according to the results of all 24 switching states. Its rising response time is about 4.9 μs. The experiment verified the optical data transmission ability of the proposed switch network.
32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1038/srep42306

IF: 4.6

2017-01-01

Scientific Reports

Abstract:To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively.
Scalable 3D Silicon Optical Switch Based on CLOS Architecture

Yuexin Yin,Chunlei Sun,Yingzhi Ding,Xinru Xu,Mengke Yao,Lan Li,Hongtao Lin,Daming Zhang

DOI: https://doi.org/10.1109/JPHOT.2022.3195893

IF: 2.4

2022-01-01

IEEE Photonics Journal

Abstract:To achieve complex functionality with small size, weight and power, photonic integrated circuits (PIC) are expanded from two-dimensional (2D) to three-dimensional (3D). In this paper, a new design for a scalable 3D silicon optical switch is proposed. Key elements, including silicon electro-optic switches, crossings, and interlayer transitions are used to define and optimize the 3D optical switching network. The architecture is based on CLOS architecture, which can be extended to multiple layers. Silicon-based two- and three-layer switches are carefully designed and analyzed as an example based on the transfer matrix technique (TMT). In a 4×4 two-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼4.16 dB, and ∼3.69 dB for the “all-cross” and “all-bar” states, respectively. In a 4×4 three-layer optical switch, the average insertion loss at 1550 nm wavelength is ∼5.96 dB, and ∼5.41 dB for the “all-cross” and “all-bar” states, respectively. The architecture also shows the scalability of both the port number and the layer number. The scalable 3D architecture proposed could improve the interconnect density twice and thrice in a single-layer design.
Compact 1 X N Thermo-Optic Switches Based on Silicon Photonic Wire Waveguides.

T Chu,H Yamada,S Ishida,Y Arakawa

DOI: https://doi.org/10.1364/opex.13.010109

IF: 3.8

2005-01-01

Optics Express

Abstract:Using silicon photonic wire waveguides, we constructed compact 1 x 1, 1 x 2, and 1 x 4 Mach-Zehnder interferometer type optical switches on a silicon-on-insulator substrate and demonstrated their switching operations through the thermo-optic effect. These switches were smaller than 140 x 65, 85 x 30, and 190 x 75 mum, respectively. At a 1550-nm wavelength, we obtained an extinction ratio larger than 30 dB, a switching power as low as 90 mW, and a switching response time of less than 100 mus. Furthermore, switching operations were successfully demonstrated for the 1 x 4 switch.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
Silicon-based digital optical switch with slot structure

Simiao Xiao,Xiang Wang,Fan Wang,Yinlei Hao,Xiaoqing Jiang,Minghua Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.837467

2009-01-01

Abstract:In this paper a silicon-based digital optical switch (DOS) with the slot structure is demonstrated. By filling electro-optic polymer in the void slot of the branches, the electro-optic effect can be applied to the DOS, and a high-speed silicon switch with digital switching property can be achieved. Analysis shows that the crosstalk is about 35dB, switching speed is less than lps, and the device length is less than 1mm. © 2009 SPIE.
Large-Scale Silicon Optical Switches for Optical Interconnection

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1117/12.2248412

2016-01-01

Abstract:Large-scale optical switches are greatly demanded in building optical interconnections in data centers and high performance computers (HPCs). Silicon optical switches have advantages of being compact and CMOS process compatible, which can be easily monolithically integrated. However, there are difficulties to construct large ports silicon optical switches. One of them is the non-uniformity of the switch units in large scale silicon optical switches, which arises from the fabrication error and causes confusion in finding the unit optimum operation points. In this paper, we proposed a method to detect the optimum operating point in large scale switch with limited build-in power monitors. We also propose methods for improving the unbalanced crosstalk of cross/bar states in silicon electro-optical MZI switches and insertion losses. Our recent progress in large scale silicon optical switches, including 64 × 64 thermal-optical and 32 × 32 electro-optical switches will be introduced. To the best our knowledge, both of them are the largest scale silicon optical switches in their sections, respectively. The switches were fabricated on 340-nm SOI substrates with CMOS 180- nm processes. The crosstalk of the 32 × 32 electro-optic switch was -19.2dB to -25.1 dB, while the value of the 64 × 64 thermal-optic switch was -30 dB to -48.3 dB.
A Compact Optical Switch Module with Si-wire Waveguides

Hirohito Yamada,Tao Chu,Makoto Tojo,Shigeru Nakamura,Masatoshi Tokushima,Yutaka Urino,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1109/group4.2007.4347687

2007-01-01

Abstract:A compact 1 × 4 optical switch modules were demonstrated with extremely small thermo-optic switches constructed by high-Δ Si-wire waveguides. The characteristics of the device chip and the module will be presented.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
Analysis on Multimode Interference Coupler-Based 1×3 Optical Switch with Mono-Compound Modulation Region

Haifeng Zhou,Xiaoqing Jiang,Jianyi Yang,Minghua Wang

DOI: https://doi.org/10.3321/j.issn:0253-2239.2007.09.029

2007-01-01

Abstract:By employing the self-imaging properties of multimode interference, a 1 × 3 optical switch with mono-compound modulation region is presented. When at different switching states, a multiple relation exists in the acquired modulation magnitudes in the connecting arms, and therefore, the phase shifters in the arms can compose a mono-compound modulation region (MCMR). By continuously changing the refractive indices in the MCMR, light incident from any input port can be switched alternatively to arbitrary output port. Based on Al0.07Ga0.93As/GaAs ridge structure, the proposed device was optimized and theoretically demonstrated by employing BEAMPROP software. The extinction ratio is as high as 30.3 dB. The crosstalk between adjacent channels is less than -29.8 dB. In a wide spectral range (-50 nm) around 1.31μm wavelength, the crosstalk keeps lower than -20 dB. This device may greatly simplify the modulating scheme of traditionaly multichannel switch and relax the complextity of external controlling.
A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

YANG Jian,CHEN Wei-wei,WANG Wan-jun,WANG Ming-hua,YANG Jian-yi

DOI: https://doi.org/10.16136/j.joel.2013.01.005

2013-01-01

Abstract:In this paper,a 4×4 optical switch matrix based on free carrier dispersion effect is designed and fabricated on silicon-on-insulator(SOI) water by a 0.8 μm standard commercial CMOS line.It consists of four electro-optic 2×2 multimode imaging-based Mach-Zehnder interferometers.As a basic unit,the proposed switch matrix can be extended to n×n matrix switch and used in both optical space-division and optical time-division switching networks.The two paired MMIs in each Mach-Zehnder structure are used as 3 dB power splitters and combiners.Each switching element is electrically driven with an independent extermal power supply.By injecting free carriers into phase shifter with the active forward P-i-n diode,the π phase shift required for switching action is achieved.Experimental results show that the 4×4 silicon photonic switch matrix has the crosstalk level lower than-8.02 dB with a common spectral bandwidth as large as 35 nm,which is from 1 530 nm to 1 565 nm.Furthermore,when a specific square-wave signal with 10%-90% transition time of 5 ns is loaded,the switching response time is measured to be 17.4 ns for the rising edge and 21 ns for the falling edge,respectively.
Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Wei Liang,Weiwei Chen,Pengjun Wang,Shixun Dai,Bohao Zhang,Yaxun Zhou,Jun Li,Yan Li,Qiang Fu,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1016/j.optcom.2020.126407

IF: 2.4

2021-01-01

Optics Communications

Abstract:In this paper, a non-volatile polarization-insensitive 1×2 silicon optical switch utilizing phase-change materials is presented. The presented device is composed of three polarization beam combiners/splitters, two directional couplers with phase change materials, and a polarization-insensitive waveguide crossing. By adjusting the phase state of phase-change material, polarization-insensitive switching behavior is realized. As an example, the proposed switch using Ge2Sb2Te5 is comprehensively optimized and analyzed based on particle swarm optimization algorithm and finite difference time domain method. The designed device can have a crosstalk of less than −15.98 dB and an insertion loss of smaller than 0.95 dB over the C-band in the case of TE polarization, while a maximum crosstalk of −13.53 dB and a maximum insertion loss of 1.37 dB can be obtained within the C-band in the case of TM polarization.
Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Wanjun Wang,Yong Zhao,Haifeng Zhou,Ting Hu,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1109/group4.2012.6324166

2012-01-01

Abstract:We report the demonstrations of two Mach-Zehnder based 2 × 2 electro-optical switches with low crosstalk. One is with assist of variable optical attenuator and the other is based on cascaded Mach-Zehnder interferometer.
Non-blocking 8×8 Silicon Electro-Optic Switch

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/cleopr.2015.7375918

2015-01-01

Abstract:A re-arrangeable non-blocking 8×8 silicon electro-optic switch was demonstrated. It had extinction ratios of 18.3~25.5dB on all "Cross" status and 13.3~19dB on all "Bar" status at 1550nm.
Ultra-large-scale Silicon Optical Switches

Lei Qiao,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1109/group4.2016.7739115

2016-01-01

Abstract:32 × 32 electro-optic and 64 × 64 thermal-optic Mach-Zehnder interferometer (MZI)-based switches were demonstrated using a 180-nm CMOS process. To the best of our knowledge, both switches that were demonstrated were the largest-scale electro-optic and thermal-optical silicon switches available.
Design and Experimental Characterization of 1×2 Silicon Optical Switch

Yekai Lu,Rui Zhu,Nan Yang,Wei Jiang,Guo-Wei Lu

DOI: https://doi.org/10.1109/icocn.2017.8121409

2017-01-01

Abstract:We design and fabricate a silicon based 1×2 optical switch based on the free-carrier plasma dispersion effect, with a Mach-Zehnder interferometer structure on silicon-on-insulator (SOI) wafer. The experimental result shows that it has an extinction ratio of 21.8 dB at 1546 nm, which meets the requirements of the most applications in optical telecommunication networks.

A CMOS Compatible 1&amp;#x00d7;3 Optical Switch Based on Silicon on Insulator

CMOS-Compatible 1 $\times$ 3 Silicon Electrooptic Switch with Low Crosstalk

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

Fabrication of Silicon Photonic Devices by Utilizing Industrial CMOS Technology

Scalable Nonblocking &Lt;inline-Formula&gt; &Lt;tex-Math Notation="latex"&gt;$4\times4$ &Lt;/tex-Math&gt; &Lt;/inline-Formula&gt; Silicon Optical Switch Based on Dual-Microring Resonators

32 × 32 Silicon Electro-Optic Switch with Built-in Monitors and Balanced-Status Units.

Scalable 3D Silicon Optical Switch Based on CLOS Architecture

Compact 1 X N Thermo-Optic Switches Based on Silicon Photonic Wire Waveguides.

High-speed compact silicon digital optical switch with slot structure

Silicon-based digital optical switch with slot structure

Large-Scale Silicon Optical Switches for Optical Interconnection

A Compact Optical Switch Module with Si-wire Waveguides

Development of Silicon Photonic Devices for Optical Interconnects

Analysis on Multimode Interference Coupler-Based 1×3 Optical Switch with Mono-Compound Modulation Region

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

Non-blocking 8&#x00d7;8 Silicon Electro-Optic Switch

Ultra-large-scale Silicon Optical Switches

Design and Experimental Characterization of 1×2 Silicon Optical Switch

A CMOS Compatible 1×3 Optical Switch Based on Silicon on Insulator

Scalable Nonblocking &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$4\times4$ &Lt;/tex-Math> &Lt;/inline-Formula> Silicon Optical Switch Based on Dual-Microring Resonators

Non-blocking 8×8 Silicon Electro-Optic Switch