Abstract:Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient AI and learning machines. An important factor in selection of the hardware building blocks is the identification of candidate materials with physical properties suitable to emulate the large dynamic ranges and varied timescales of neuronal signaling. Previous work has shown that the all-or-none spiking behavior of neurons can be mimicked by threshold switches utilizing material phase transitions. Here, we demonstrate that devices based on a prototypical metal-insulator-transition material, vanadium dioxide (VO2), can be dynamically controlled to access a continuum of intermediate resistance states. Furthermore, the timescale of their intrinsic relaxation can be configured to match a range of biologically relevant timescales from milliseconds to seconds. We exploit these device properties to emulate three aspects of neuronal analog computation: fast (~1 ms) spiking in a neuronal soma compartment, slow (~100 ms) spiking in a dendritic compartment, and ultraslow (~1 s) biochemical signaling involved in temporal credit assignment for a recently discovered biological mechanism of one-shot learning. Simulations show that an artificial neural network using properties of VO2 devices to control an agent navigating a spatial environment can learn an efficient path to a reward in up to fourfold fewer trials than standard methods. The phase relaxations described in our study may be engineered in a variety of materials and can be controlled by thermal, electrical, or optical stimuli, suggesting further opportunities to emulate biological learning in neuromorphic hardware.

Artificial afferent neurons based on the metal-insulator transition of VO2

Oxygen vacancies modulated VO2 for neurons and Spiking Neural Network construction

Neuromorphic one-shot learning utilizing a phase-transition material

Temporal credit assignment for one-shot learning utilizing a phase transition material

Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions

Artificial Neurosynaptic Device Based on Amorphous Oxides for Artificial Neural Network Constructing

A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface

An Artificial Spiking Afferent Nerve Based on Mott Memristors for Neurorobotics

Integrated Artificial Neurons from Metal Halide Perovskites

Artificial neurons based on antiferromagnetic auto-oscillators as a platform for neuromorphic computing

Vanadium Dioxide Circuits Emulate Neurological Disorders

Reconfigurable cascaded thermal neuristors for neuromorphic computing

High-order sensory processing nanocircuit based on coupled VO2 oscillators

Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors

A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering

Contact-electrification-activated artificial afferents at femtojoule energy

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Compact Artificial Neuron Based on Anti-Ferroelectric Transistor

Inherent stochasticity during insulator–metal transition in VO 2

Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications

A Low-power Artificial Spiking Neuron Based on Ionic Memristor for Modulated Frequency Coding