Abstract:In this study, we reveal a novel NbO x memristor structure that significantly advances neuromorphic computing by modulating compliance current (CC). This structure emulates the dynamic functionalities of artificial synapses and neurons, addressing the challenge of accurately imitating biological counterparts. Our memristors uniquely exhibit both memory switching (MS) and threshold switching (TS) properties through oxygen content modulation, enabling a single device to undertake diverse synaptic plasticity and neuronal functions. Our findings demonstrate the dual functionality of NbO x -based memristors: acting as TS and neuron-like devices at high CCs, and as MS and synapse-like elements at low CCs. At a higher CC, the device exhibits effective TS behaviors, including favorable threshold and holding voltages, along with efficient wait and recovery times. This has enabled the creation of a restricted Boltzmann machine (RBM) model for reproducing Modified National Institute of Standards and Technology (MNIST) database images and the implementation of the leaky integrate-and-fire (LIF) model, which in turn opens possibilities for utilizing spike neural network (SNN) frameworks. At lower CCs, the memristor displays synaptic characteristics such as short-term and long-term memory, facilitated by retention loss for offline MNIST simulation. The NbO x memristor represents a critical component for the future of neuromorphic devices and capable of performing both neuronal and synaptic functions. It paves the way for sophisticated, integrated computational models, thereby significantly contributing to the neuromorphic engineering field. Through comprehensive structural and functional analyses, this study underscores the potential of NbO x memristors in neuromorphic computing and lays the foundation for future high-performance neuromorphic device advancements.

Neuronal Firing Characteristics in the NbO2 Based Mott Memristor

Microscopic Modeling and Optimization of NbOx Mott Memristor for Artificial Neuron Applications

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Experimental Demonstration of Coplanar NbO x Mott Memristors for Spiking Neurons

Characterization and modeling of spiking and bursting in experimental NbOx neuron

Realization of Artificial Neuron with Firing Saturation Based on Single Memristive Device

Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems

Fatigue of NbOx-Based Locally Active Memristors—Part II: Mechanisms and Modeling

An Ion‐Mediated Spiking Chemical Neuron based on Mott Memristor

Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

A 1T1M Programmable Artificial Spiking Neuron Via the Integration of FeFET and NbOx Mott Memristor

A Leaky Integrate-and-Fire Neuron Based on Hexagonal Boron Nitride (h-BN) Monocrystalline Memristor

Realization of memristor and synaptic simulation behaviors based on LiNbO x

Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Memristive Hodgkin-Huxley Neurons with Diverse Firing Patterns for High-Order Neuromorphic Computing

High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications

Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching

Oscillation Neuron Based on Threshold Switching Characteristics of Niobium Oxide Films

Modulation of Phase-Locking Characteristics of NbOx Memristor by Ag Doping.

High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications