An Ion‐Mediated Spiking Chemical Neuron based on Mott Memristor

Huihui Ren,Fanfan Li,Min Wang,Guolei Liu,Dingwei Li,Rui Wang,Yitong Chen,Yingjie Tang,Yan Wang,Ran Jin,Qi Huang,Lixiang Xing,Xiaopeng Chen,Juan Wang,Chengchen Guo,Bowen Zhu
DOI: https://doi.org/10.1002/adma.202403678
IF: 29.4
2024-06-19
Advanced Materials
Abstract:Artificial spiking neurons capable of interpretating ionic information into electrical spikes are critical to mimic the biological signaling systems. Mott memristors are attractive for constructing artificial spiking neurons due to their simple structure, low energy consumption, and rich neural dynamics. However, challenges remain in achieving ion‐mediated spiking and biohybrid‐interfacing in Mott neurons. Here, we introduce a biomimetic spiking chemical neuron (SCN) utilizing an NbOx Mott memristor and oxide field‐effect transistor (FET)‐type chemical sensor The SCN exhibits both excitation and inhibition spiking behaviors toward ionic concentrations akin to biological neural systems. It demonstrates spiking responses across physiological and pathological Na+ concentrations (1–200 mM). The Na+‐mediated SCN enables both frequency encoding and time‐to‐first‐spike (TTFS) coding schemes, illustrating the rich neural dynamics of Mott neuron. Additionally, the SCN interfaced with L929 cells facilitates real‐time modulation of ion‐mediated spiking under both normal and salty cellular microenvironments. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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