Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Dynamics of Voltage Driven Self-Sustained Oscillations in NdNiO$_3$ Neuristors

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching

High Frequency Response of Volatile Memristors

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching

Realization of volatile and non-volatile resistive switching with N-TiO2 nanorod arrays based memristive devices through compositional control

Non-volatile multi-state electrothermal resistive switching in a strongly correlated insulator thin-film device

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

High Spatial Resolution Thermal Mapping of Volatile Switching in NbOx-Based Memristor Using In Situ Scanning Thermal Microscopy.

Non-Thermal Resistive Switching in Mott Insulators

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Non-thermal resistive switching in Mott insulator nanowires

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Optical imaging of strain-mediated phase coexistence during electrothermal switching in a Mott insulator

Electric field induced Mott-insulator to metal transition and memristive behaviour in epitaxial V$_2$O$_3$ thin film

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability