Abstract:Si-based resistive random access memory (RRAM) devices at the nanoscale with high uniformity have great potential applications in the future. We demonstrate that the uniformity evolution of the a-SiNx:H RRAM at the low resistance state (LRS) and the high resistance state (HRS) can be clearly monitored by presetting a Si dangling bond (Si-DB) conductive pathway through thermal energy. It is found that the increased magnitude of uniformity for the LRS and the HRS are determined by the number of preset Si-DBs, which can be controlled by tuning thermal energy. As for LRS, the Si-DBs produced under the electric field along with the preset Si-DB conductive pathways form the main conductive pathway. Theoretical calculation of current-voltage (I-V) curves indicates that the Si-DB conductive pathways obey the trap-assisted tunneling model. In the HRS, the preset Si-DBs induced by thermal energy are the unique source of the conductive pathway. The transmission mechanism involves a trap-to-trap process by the hopping of electrons under a low electric field, Poole-Frenkel emission in the main region under the medium electric field and Fowler-Nordheim tunneling under the high electric field. Our discovery of the uniformity evolution for a-SiNx:H RRAM device through presetting the Si-DB conductive pathway provides new insight into the resistive switching mechanism of next generation Si-based RRAM devices.

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO 2 at room temperature

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN<sub>x</sub>:H Resistive Switching Memory by the Transient Current

Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory

Resistive Switches and Memories from Silicon Oxide.

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Hybrid Channel Induced Forming-Free Performance in Nanocrystalline-Si:H/a-sinx:h Resistive Switching Memory.

Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor

Resistive Switching Device Based on Core-shell Ag@SiO2 Nanowire Networks

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

HYBRID NANOELECTROMECHANICAL SWITCH AND RESISTIVE MEMORY IN SILICON NANOWIRES BY VLSI NEMS

Single-crystalline Metal Filament-Based Resistive Switching in a Nitrogen-Doped Carbon Film Containing Conical Nanopores

Resistive Switching Mechanism in the One Diode-One Resistor Memory Based on P+-Si/n-zno Heterostructure Revealed by In-Situ TEM

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Presetting Conductive Pathway Induced the Switching Uniformity Evolution of A-Sinx:H Resistive Switching Memory.

Individual Zn 2 SnO 4 -Sheathed ZnO Heterostructure Nanowires for Efficient Resistive Switching Memory Controlled by Interface States

Multimode Resistive Switching in Single ZnO Nanoisland System.

full papers 2910 Resistive switching Resistive Switching in Nanogap Systems on SiO 2 Substrates