Individual Zn 2 SnO 4 -Sheathed ZnO Heterostructure Nanowires for Efficient Resistive Switching Memory Controlled by Interface States

Baochang Cheng,Zhiyong Ouyang,Chuan Chen,Yanhe Xiao,Shuijin Lei

DOI: https://doi.org/10.1038/srep03249

IF: 4.6

2013-01-01

Scientific Reports

Abstract:Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn 2 SnO 4 -sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol–gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn 2 SnO 4 heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.