Abstract:Energy band diagrams are widely utilized to explain the switching mechanism of resistance random access memory (RRAM). However, a precise and quantitative band theory is still lacking in this field. Although HfS2 has good applications in many fields because of its good electrical and optical properties, its applications in RRAM have seldom been reported. In this work, the exfoliated nanosheets of HfS2 were utilized to fabricate memory devices with a structure of Pt/Al/HfS2/p(+)-Si, which show typical bipolar resistive switching behavior with high switching voltage and a small ratio of high and low resistive states (R-ratio). According to the density functional theory (DFT) calculation results of energy band diagrams, instead of conductive filament formation in other resistive switching materials, the doping of sulfur vacancy (V-S) of 3.8% is already enough to change the whole HfS2 layer from the semiconductor to the metal. The transition is caused by the change in the V-S doping concentration from low to high, which is the result of the generation and movement of V-S under an electric field. The DFT also calculated that HfS2 devices utilizing Indium Tin Oxide as the bottom electrode can show bipolar resistive switching behavior with lower switching voltage and a higher R-ratio than those utilizing p(+)-Si, which is confirmed by the experimental results. The DFT calculation can be utilized for both explaining the switching mechanism and designing the device structure to optimize the switching characteristics.

Hybrid Channel Induced Forming-Free Performance in Nanocrystalline-Si:H/a-sinx:h Resistive Switching Memory.

Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

a-SiN x :H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Presetting Conductive Pathway Induced the Switching Uniformity Evolution of A-Sinx:H Resistive Switching Memory.

Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

The Ultra‐Low Power Performance of A‐sinxoy:H Resistive Switching Memory

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN<sub>x</sub>:H Resistive Switching Memory by the Transient Current

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

HYBRID NANOELECTROMECHANICAL SWITCH AND RESISTIVE MEMORY IN SILICON NANOWIRES BY VLSI NEMS

The Development of Nanometer Solid State Storage Memory

Resistive Switching with Self-Rectifying Behavior in Cu/Siox/Si Structure Fabricated by Plasma-Oxidation

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current

Forming-free and Self-Rectifying Resistive Switching of the Simple Pt/TaOx/n-Si Structure for Access Device-Free High-Density Memory Application.

Resistive switching behaviors and mechanisms of HfS<sub>2</sub> film memory devices studied by experiments and density functional theory calculations

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects