Abstract:Si-based resistive random access memory (RRAM) devices at the nanoscale with high uniformity have great potential applications in the future. We demonstrate that the uniformity evolution of the a-SiNx:H RRAM at the low resistance state (LRS) and the high resistance state (HRS) can be clearly monitored by presetting a Si dangling bond (Si-DB) conductive pathway through thermal energy. It is found that the increased magnitude of uniformity for the LRS and the HRS are determined by the number of preset Si-DBs, which can be controlled by tuning thermal energy. As for LRS, the Si-DBs produced under the electric field along with the preset Si-DB conductive pathways form the main conductive pathway. Theoretical calculation of current-voltage (I-V) curves indicates that the Si-DB conductive pathways obey the trap-assisted tunneling model. In the HRS, the preset Si-DBs induced by thermal energy are the unique source of the conductive pathway. The transmission mechanism involves a trap-to-trap process by the hopping of electrons under a low electric field, Poole-Frenkel emission in the main region under the medium electric field and Fowler-Nordheim tunneling under the high electric field. Our discovery of the uniformity evolution for a-SiNx:H RRAM device through presetting the Si-DB conductive pathway provides new insight into the resistive switching mechanism of next generation Si-based RRAM devices.

A-Sinx:H-based Ultra-Low Power Resistive Random Access Memory with Tunable Si Dangling Bond Conduction Paths.

The Ultra‐Low Power Performance of A‐sinxoy:H Resistive Switching Memory

Tracing the Si Dangling Bond Nanopathway Evolution Ina-Sinx:H Resistive Switching Memory by the Transient Current.

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current

Presetting Conductive Pathway Induced the Switching Uniformity Evolution of A-Sinx:H Resistive Switching Memory.

Plasma Oxidation Induced Ultra-Low Power Performance From A-Sinx:H Resistive Switching Memory

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

Hybrid Channel Induced Forming-Free Performance in Nanocrystalline-Si:H/a-sinx:h Resistive Switching Memory.

Low Operation Current of Si/HfO2 Double Layers Based RRAM Device with Insertion of Si Film

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Self-Selection Effects and Modulation of Taox Resistive Switching Random Access Memory with Bottom Electrode of Highly Doped Si

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Interface Engineering with MoS2-Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

High Performance of Graphene Oxide-Doped Silicon Oxide-Based Resistance Random Access Memory

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Unipolar Resistive Switching with Forming-Free and Self-Rectifying Effects in Cu/HfO2/n-Si Devices