Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Dongyi Lu,Yadong Zhao,Tran Xuan Anh,Yu Hong Yu,Daming Huang,Yinyin Lin,Shi-Jin Ding,Peng-Fei Wang,Ming-Fu Li

DOI: https://doi.org/10.1109/ted.2014.2325599

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:The area, temperature (160-300 K), and bias polarity dependences of the I-V curves of the self-rectifying n(+)Si-HfO2-Ni resistance random access memory (RRAM) have been measured systematically. The complementary nonrectifying p(+)Si-HfO2-Ni RRAM I-V data are also provided for reference. To explain all experimental data, three resistances in series in the RRAM device: 1) the Si-HfO2 contact resistance RSi-HfO; 2) the HfO2 dielectric resistance R-HfO; and 3) the HfO2-Ni contact resistance RHfO-Ni must be considered on an equal footing. Previously reported first principle calculation results for the density of states of the monoclinic HfO2 grain boundary with high and low densities of oxygen vacancy V-O(0) are adopted for describing the conductive filament resistance R-HfO of the dielectric at low-and high-resistance states. The temperature dependence of I-V is controlled by three different energy barriers: Schottky-like barrier, multiphonon trap assisted tunneling barrier, and multiphonon deep trap capture barrier (E-CAPTURE). It is demonstrated that all experimental data can be explained in a natural and unified way. This model is valuable not only for understanding the conduction mechanism, but also for guiding the future self-rectifying RRAM technology development.