Abstract:The reversible resistive switching effect at oxide interface shows promising applications in information storage and artificial intelligence. However, the microscopic switching mechanism is still elusive due to the difficulty of direct observation of the electrical and chemical behavior at the buried interface, which becomes a major barrier to design reliable, scalable, and reproducible devices. Here we used a gold-coated AFM tip as a removable electrode to investigate the resistive switching effect in a microscopic Au/Nb:SrTiO3 Schottky junction. We found that unlike the inhomogeneous random resistive switching in the macroscopic Schottky junctions, the high and low resistance states can be reversibly switched in a controllable way on the Nb-doped SrTiO3 surface by the conductive tip. The switching between the high and low resistance states in vacuum is accompanied by the reversible shift of the surface Fermi level. We indicate that the transfer of the interface oxygen ion in a double-well potential is responsible for the resistive switching in both macroscopic and microscopic Schottky junctions. Our findings provide a guide to optimize the key performance parameters of a resistive switching device such as operation voltage, switching speed, on/off ratio, and state retention time by proper electrode selection and fabrication strategy. (C) 2016 Elsevier B.V. All rights reserved.

Evolution of Resistive Switching Polarity in Au/Ar + Bombarded SrTi 0.993 Nb 0.007 O 3 /in Sandwiches

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Investigation of the Resistance Switching in Au/SrTiO3:Nb Heterojunctions

Effects Of The Electroforming Polarity On Bipolar Resistive Switching Characteristics Of Srtio3-Delta Films

Effect of Post-Deposition Annealing Pressure on Bipolar Resistive Switching in RF Sputtered BiFeO3/Nb:SrTiO3 Heterostructure

Unidirectional Threshold Resistive Switching in Au/NiO/Nb:SrTiO3 Devices

Charge Trapping-Detrapping Induced Resistive Switching in Ba0.7Sr0.3TiO3

Temperature-Dependent And Polarization-Tuned Resistive Switching In Au/Bifeo3/Srruo3 Junctions

Evolution of Resistive Switching and Its Ionic Models in Pt/Nb-doped SrTiO3junctions

Bipolar resistive switching based on SrTiO3/YBa 2Cu3O7 epi-layers

Effect of Poling Process on Resistive Switching in Au/BiFeO3/SrRuO3 Structures

Understanding the Intermediate Initial State in Tio2-Delta/La2/3sr1/3mno3 Stack-Based Bipolar Resistive Switching Devices

Resistive Switching of Pt/ZrO2/YBa2Cu3O7sandwiches

Nonvolatile Resistive Switching in Metal/La-Doped Bifeo3/Pt Sandwiches

Trap State Controlled Bipolar Resistive Switching Effect and Electronic Transport in Laalo3/Nb:Srtio3 Heterostructures

Electrode Dependence of Resistive Switching in Au/Ni–Au Nanoparticle Devices

Metal and Annealing Atmospheres Dependence of Resistive Switching in Metal/Nb-0.7wt%-Srtio3 Interfaces

Substrate Effect on the Resistive Switching in BiFeO3 Thin Films

Resistance Switching Effect in LaAlO 3 /Nb-Doped SrTiO 3 Heterostructure

Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing

Interface Modulation and Resistive Switching Evolution in Pt/NiO X /al2o3/n+–si Structure