Resistance Switching Effect in LaAlO 3 /Nb-Doped SrTiO 3 Heterostructure

H. F. Tian,Y. G. Zhao,X. L. Jiang,J. P. Shi,H. J. Zhang,J. R. Sun

DOI: https://doi.org/10.1007/s00339-011-6276-5

2011-01-01

Applied Physics A

Abstract:The authors report on the fabrication and electronic transport property of LaAlO3/Nb-doped SrTiO3 heterostructure. The current–voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 104. More interestingly, the relaxation of junction current after switching follows the Curie–von Schweidler law J∝t −n with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.