Temperature-dependent Resistance Switching in SrTiO3

Jian-kun Li,Chao Ma,Kui-juan Jin,Chen Ge,Lin Gu,Xu He,Wen-jia Zhou,Qing-hua Zhang,Hui-bin Lu,Guo-zhen Yang

DOI: https://doi.org/10.1063/1.4953624

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Resistance switching phenomena were studied by varying temperature in SrTiO3 single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.