Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
A. Gruverman,D. Wu,H. Lu,Y. Wang,H. W. Jang,C. M. Folkman,M. Ye. Zhuravlev,D. Felker,M. Rzchowski,C.-B. Eom,E. Y. Tsymbal
DOI: https://doi.org/10.1021/nl901754t
IF: 10.8
2009-08-21
Nano Letters
Abstract:Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO(3) single-crystalline thin films on SrRuO(3) bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology