Abstract:Multiferroic tunnel junctions (MFTJs), normally consisting of a four-state resistance, have been studied extensively as a potential candidate for nonvolatile memory devices. More interestingly, the MFTJs whose resistance can be tuned continuously with applied voltage were also reported recently. Since the performance of MFTJs is closely related to their interfacial structures, it is necessary to investigate MFTJs at the atomic scale. In this work, atomic-resolution HAADF, ABF, and EELS of the La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 MFTJ memristor have been obtained with aberration-corrected scanning transmission electron microscopy (STEM). These results demonstrate varied degree of interfacial cation intermixing at the bottom BTO/LSMO interface, which has a direct influence on the polarization of the ferroelectric barrier BTO and the electronic structure of Mn near the interfaces. We also took advantage of a simplified model to explain the relation between the interfacial behavior and polarization states, which could be a contributing factor to the transport properties of this MFTJ.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11661.EDXS maps of the LSMO/BTO/LSMO heterostructure; multiple typical areas with opposite ferroelectric domains; the raw data of the line profiles; 2D atomic EELS mapping and valence states of Ti; the valence states of Mn in the bulk LSMO; a simplified equivalent circuit (PDF)This article has not yet been cited by other publications.

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