Abstract:Ferroelectric heterostructures with bi-stable state of polarization are appealing for data storage as well as tunable functionalities such as memristor behavior. While an increasing number of experimental and theoretical studies suggest that polarization persists in ultrathin epitaxial heterostructures approaching just a couple of unit cells, the switching of such polar order is much less well understood, and whether polarization can be reversed in ultrathin ferroelectric heterostructures remains to be answered. Here we fabricate high-quality 7-unit cell thick BaTiO3 (BTO) films on Nb-doped single crystalline SrTiO3 (NSTO) substrate, and demonstrate their apparent yet unambiguously false polarization reversal due to charge injection using comprehensive piezoresponse force microscopy (PFM) studies. The presence of weak polar order consistent with linear piezoelectricity is confirmed at the atomic scale by high resolution integrated differential phase contrast (IDPC) of transmission electron microscopy (TEM) as well as macroscopic second harmonic generation (SHG), while the lack of polarization reversal under the voltage applied is supported by density functional theory calculation showing the persistence of dead layer on the surface. Nevertheless, poling-induced electric conduction differing by two orders of magnitude is observed, demonstrating resistive switching in ferroelectric heterostructure in the absence of polarization reversal, even with weak polar order. Our finding has technological implications on emerging memristor applications with potentially more accessible states than bi-stable polarization modulated mechanism, and raises technical challenges to unambiguously demonstrate polarization switching in ultrathin films at their critical size limit.

Temperature-Dependent And Polarization-Tuned Resistive Switching In Au/Bifeo3/Srruo3 Junctions

Effect of Poling Process on Resistive Switching in Au/BiFeO3/SrRuO3 Structures

Evolution of Resistive Switching Polarity in Au/Ar + Bombarded SrTi 0.993 Nb 0.007 O 3 /in Sandwiches

Modulation of the Resistive Switching of BiFO3 Thin Films Through Electrical Stressing

Temperature Dependences of Ferroelectricity and Resistive Switching Behavior of Epitaxial Bifeo3 Thin Films

Resistive Switching in BiFeO_3 -Based Heterostructures Due to Ferroelectric Modulation on Interface Schottky Barriers

Temperature-dependent Tunneling Electroresistance in Pt/BaTiO3/SrRuO3 Ferroelectric Tunnel Junctions

Controllable Resistive Switching in Au/Nb:Srtio3 Microscopic Schottky Junctions

Fatigue behavior of resistive switching in a BiFeO3 thin film

Investigation of the Resistance Switching in Au/SrTiO3:Nb Heterojunctions

Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt

Effects of interface layers and domain walls on the ferroelectric resistive switching behavior of Au/BiFeO3/La0.6Sr0.4MnO3 heterostructures.

Bipolar resistive switching based on SrTiO3/YBa 2Cu3O7 epi-layers

Polarization-switching Pathway Determined Electrical Transport Behaviors in Rhombohedral BiFeO3 Thin Films.

Mechanism of Ferroelectric Resistive Switching in Bi0.9la0.1feo3 Thin Films

Temperature-dependent Resistance Switching in SrTiO3

Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching

Bipolar Resistive Switching in BiFe 0.95 Zn 0.05 O 3 Films

Reproducible Resistive Switching in the Super-Thin Bi2fecro6 Epitaxial Film with Srruo3 Bottom Electrode

Unconventional Resistive Switching Behavior in Ferroelectric Tunnel Junctions.

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching