Temperature Dependences of Ferroelectricity and Resistive Switching Behavior of Epitaxial Bifeo3 Thin Films

Lu Zeng-Xing,Song Xiao,Zhao Li-Na,Li Zhong-Wen,Lin Yuan-Bin,Zeng Min,Zhang,Lu Xu-Bing,Wu Su-Juan,Gao Xing-Sen,Yan Zhi-Bo,Liu Jun-Ming
DOI: https://doi.org/10.1088/1674-1056/24/10/107705
2015-01-01
Abstract:We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage (I–V ) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (<253 K), the I–V curve shows an open circuit voltage (OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polar-ization reversal displacement current. While at relative higher temperatures (>253 K), the I–V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduc-tion switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of>298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.
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