Low Voltage Performance Of Epitaxial Bifeo3 Films On Si Substrates Through Lanthanum Substitution

y h chu,qian zhan,cheol hoon yang,m p cruz,l martin,t zhao,peng yu,r ramesh,p t joseph,i n lin,w tian,d g schlom
DOI: https://doi.org/10.1063/1.2897304
IF: 4
2008-01-01
Applied Physics Letters
Abstract:We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFeO3 films on SrTiO3-templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9La0.1)FeO3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45 mu C/cm(2), a converse piezoelectric coefficient d(33) of 45 pm/V, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1 V can been obtained in a 100 nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2-3 V. (c) 2008 American Institute of Physics.
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