Ferroelectricity in Low-Permittivity SrZrO3 Epitaxial Films

Shan Li,Yilin Wang,Mingdi Yang,Shuai Xu,Mingxuan Liu,Qiang Li,Jun Miao,Er-Jia Guo,Kuijuan Jin,Lin Gu,Qinghua Zhang,Jinxia Deng,Xin Chen,Xianran Xing
DOI: https://doi.org/10.1021/acs.chemmater.3c00147
IF: 10.508
2023-01-01
Chemistry of Materials
Abstract:Bulk SrZrO3 has an orthorhombic perovskite structure (Pbnm) with a central symmetry but exhibits a low dielectric constant. In this study, we reported a room-temperature ferroelectric SrZrO3 thin film with a low dielectric constant, induced by compressive strain from the SrTiO3 substrate. The presence of an out-of-phase boundary structure allows SrZrO3 with a large lattice mismatch to grow epitaxially on SrTiO3 substrates. The apparent atomic displacements in the lattice are revealed by scanning transmission electron microscopy imaging. Compressive strain induces an orthorhombic-to-monoclinic phase transition, evidenced by both the atomic structure obtained from the annular bright-field image and the structure optimized with first-principles calculation. Further first-principles calculations demonstrated that compressive strain causes a polar displacement of the Zr atom inside the ZrO6 octahedron, which is the origin of the ferroelectricity. Our work shows a way to design novel ferroelectrics from conventional non-ferroelectric materials, which is of significant importance to robust, stable, and lead-free ferroelectrics applications.
What problem does this paper attempt to address?