Stereointerface Structure Drives Ferroelectricity in BaZrO3 Films.

Shan Li,Jiaqi Li,Yilin Wang,Mingdi Yang,Chuanrui Huo,Shuai Xu,Xin Chen,Qiang Li,Jun Miao,Er-Jia Guo,Kuijuan Jin,Lin Gu,Qinghua Zhang,Ting Lin,Kun Lin,Ling Huang,Xianran Xing

DOI: https://doi.org/10.1021/acs.inorgchem.4c02145

IF: 4.6

2024-01-01

Inorganic Chemistry

Abstract:Interfacial strain engineering can induce structural transformation and introduce new physical properties into materials, which is an effective method to prepare new multifunctional materials. However, interfacial strain has a limited spatial impact size. For example, in 2D thin films, the critical thickness of biaxial strain is typically less than 20 nm, which is not conducive to the maintenance of a strained structure and properties in thick film materials. The construction of a 3D interface can solve this problem. The large lattice mismatch between the BaZrO3 thin film and the substrate can induce the out-of-phase boundary (OPB) structure, which can extend along the thickness direction with the stacking of atoms. The lattice distortion at the OPB structure can provide a clamping effect for each layer of atoms, thus expanding the spatial influence range of biaxial strain. As a result, the uniform in-plane strain distribution and strain-induced ferroelectricity (P- r = 13 mu C/cm(2)) are maintained along the thickness direction in BaZrO3 films.