Rhombohedral R3 Phase of Mn‐Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity
Jiasheng Guo,Lei Tao,Xing Xu,Lingxuan Hou,Ce‐Wen Nan,Shixuan Du,Chonglin Chen,Jing Ma
DOI: https://doi.org/10.1002/adma.202406038
IF: 29.4
2024-10-10
Advanced Materials
Abstract:A distinct rhombohedral R3 ferroelectric phase is successfully synthesized in Mn‐doped Hf0.5Zr0.5O2 epitaxial thin films, with exceptional remnant polarization, retention, and endurance. This advancement enables the controlled phase transition among R3m, R3, and Pca21 polar phases by simply adjusting the Mn dopant concentration and film thickness. The research broadens the understanding of HfO2‐based ferroelectric materials and potentially promotes the advancement of integrated ferroelectric devices. HfO2‐based ferroelectric materials are emerging as key components for next‐generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon‐based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn‐doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 μC cm−2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology