Abstract:The structure studied here consisting of a Hf0.5Zr0.5O2 (HZO) epitaxial film and an yttria‐stabilized zirconia (YSZ) substrate demonstrates polymorph‐selective and fully‐coherent growth of hafnia films with high crystal quality. Besides, the thermally‐activated oxygen conductivity of the substrate enables the ferroelectric switching in the orthorhombic film. This constitutes an ion‐driven electronic effect, and supports the relationship between ferroelectricity and oxygen mobility. Films of ferroelectric hafnia have hitherto been deposited on electrodes with a non‐fluorite crystal structure. As a result, they are polycrystalline, contain fractions of non‐ferroelectric polymorphs or have poor crystal quality. Here, a strategy that circumvents all these limitations is shown. Seven nanometers‐thick epitaxial Hf0.5Zr0.5O2 (HZO) films are deposited directly on yttria‐stabilized zirconia (YSZ) single‐crystals. The fluorite structure of the whole system enables coherent epitaxy, while the substrate orientation induces polymorph‐selective growth, being the HZO films orthorhombic on YSZ(111) and monoclinic on YSZ(001). Besides, the YSZ substrate can play the role of a buried floating electrode under the appropriate measuring conditions (temperature and frequency) thanks to its thermally‐activated oxygen conductivity. Indeed, out‐of‐plane ferroelectric switching is confirmed in the orthorhombic HZO samples at 185 °C and 0.01 Hz frequency. This original approach avoids the need to deposit conducting bottom layers, allowing high‐quality orthorhombic hafnia to be obtained directly on the substrate and its ferroelectric nature to be studied. Moreover, it constitutes a case of ion‐driven ferroelectric switching, and thus gives support to the recently proposed relationship between ionic conductivity, and ferroelectricity in fluorite systems.

Epitaxy‐Driven Ferroelectric/Non‐Ferroelectric Polymorph Selection in an All‐Fluorite System

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 with Metallic Pyrochlore Oxide Electrodes

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Stabilization of Ferroelectric Hf0.5Zr0.5O2 Epitaxial Films via Monolayer Reconstruction Driven by Interfacial Redox Reaction

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Ferroelectricity in hafnia controlled via surface electrochemical state

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Robust Ferroelectricity in HfO2-based Bulk Crystals Via Polymorphic Engineering