Abstract:Ferroelectric photovoltaic materials with intrinsic spontaneous polarization have attracted great attention because the ferroelectric polarization can promote the directional migration of electrons and holes, and reduce the trend of carrier recombination. Recently, the evidence of ferroelectricity in the typical three-dimensional all-inorganic halide perovskites CsGeX3, with band gaps of 1.6 eV to 2.3 eV has been confirmed. But the spontaneous polarization of ferroelectric perovskite CsGeX3 is ~10 to 20 μc/cm2 which is weaker than that of ABO3 (~26 to 75 μc/cm2). Strain engineering has a significant influence on the ferroelectric polarization of semiconductor materials by controlling the lattice scaling and the internal atomic spacing. Hence, in this work, strain engineering is introduced to enhance the ferroelectric polarization and maintain the photovoltaic properties of ferroelectric perovskite CsGeBr3. In this paper, we studied the ferroelectric polarization and photoelectric properties of ferroelectric perovskite CsGeBr3 under different triaxial compressive strain based on first-principle calculations. The calculated results show that when the applied compressive strain increases from 0% to -4%, the spontaneous polarization of ferroelectric perovskite CsGeBr3 increases from 14.23 μc/cm2 to 51.61 μc/cm2, and the band gap reduces from 2.3631 eV to 1.5310 eV. The effective mass of electrons and holes gradually reduces, exciton binding energies decrease from 48 meV to 5 meV, and the optical absorption coefficient is strongly enhanced from 3×105 cm-1 to 5×105 cm-1 in visible range. Besides, the power conversion efficiency(PCE) of CsGeBr3 is significantly increased from 16.95% to 26.77%. Therefore, the results indicate that the application of compressive strain can increase the ferroelectric polarization and even improve the original photovoltaic performance of ferroelectric perovskite CsGeBr3. Our theoretical calculations can provide useful insights and beneficial guidance into experimental studies of ferroelectric perovskites in photoelectric applications.

Strain-induced Improper Ferroelectricity in Ruddlesden-Popper Perovskite Halides

Strain-induced Ferroelectricity and Lattice Coupling in BaSnO3 and SrSnO3.

Ferroelectricity in Ruddlesden-Popper Chalcogenide Perovskites for Photovoltaic Application: the Role of Tolerance Factor

Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene Fluoride)-Based Flexible Nanocomposites

Antiferroelectric and Antiferrodistortive Phase Transitions in Ruddlesden-Popper Pb2tio4 from First-Principles

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Tuning the Band Gap and Polarization of BaSnO3/SrSnO3 Superlattices for Photovoltaic Applications.

Ferroelasticity in Two-Dimensional Hybrid Ruddlesden$-$Popper Perovskites Mediated by Cross-Plane Intermolecular Coupling and Metastable Funnel-Like Phases

Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Interplay of coupling between strain and rotation in ferroelectric SrZrO3/SrTiO3 superlattices.

Hybrid Improper Ferroelectricity In Srzro3/Bazro3 Superlattice

Theoretical study on photoelectric properties of ferroelectric photovoltaic perovskite CsGeBr3 based on first-principle calculations

Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction

Inducing Spontaneous Electric Polarizations in Double Perovskite Iodide Superlattices for New Ferroelectric Photovoltaic Materials

Two-dimensional ferroelectricity induced by octahedral rotation distortion in perovskite oxides

A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties

Enhanced Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Ferroelasticity Mediated Energy Conversion in Strained Perovskite Films

Band alignment engineering of a Ruddlesden–Popper perovskite-based heterostructure constructed using Cs 2 SnI 2 Cl 2 and α-In 2 Se 3 : The effects of ferroelectric polarization switching and electric fields

A Highly Strained Phase in PbZr 0.2 Ti 0.8 O 3 Films with Enhanced Ferroelectric Properties