Coupled Current Jumps and Domain Wall Creeps in a Defect‐Engineered Ferroelectric Resistive Memory
Biaohong Huang,Zhongshuai Xie,Dingshuai Feng,Lingli Li,Xiaoqi Li,Tula R. Paudel,Zheng Han,Weijin Hu,Guoliang Yuan,Tom Wu,Zhidong Zhang
DOI: https://doi.org/10.1002/aelm.202101059
IF: 6.2
2021-12-30
Advanced Electronic Materials
Abstract:Ferroelectric (FE) resistive switching has attracted considerable interest as a promising candidate for applications in non‐volatile memory technology. In this work, via judiciously controlling the defect states of oxygen vacancy through Sm‐doping, the authors obtain multiple current jumps/discrete resistance states in the resistive switching memories based on a model FE BiFeO3 (BFO). These hitherto unreported current jumps are attributed to the space‐charge‐limited current correlated with electron trapping by oxygen vacancies in the BFO film. Concurrently, oxygen vacancies serve as the pinning centers for the FE domains, leading to the domain wall creep behavior. These results illustrate the strong interplay between the defect, resistive switching, and domain wall creep behavior in FE diodes, providing a new insight into the mechanism of FE resistive switching. Overall, the large on/off ratio of ≈5 × 105, multiple resistance states, and fast switching speed of ≈30 ns, promise their potential applications in multi‐level data storage memories. By controlling defect states of oxygen vacancy through Sm doping, discrete current jumps, and polarization states have been achieved in SmxBi1−xFeO3‐based ferroelectric diode, promising its applications in multi‐level data storage. Different from the conducting bridge/filament induced multiple resistance states, oxygen vacancies, serving as electron traps, and domain pinning centers, are account for the complementary current jumps and domain wall creep.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology