Resistive Switching Effect of Multiferroic Complex Oxide Solid Solution Thin Films

Fang Hu,Wenjie Ming,Liu Yang,Can Huang,Hongyang Zhao,Shuhong Xie,Zhenxiang Cheng,Tingting Jia
DOI: https://doi.org/10.1021/acsaelm.1c00465
IF: 4.494
2021-07-16
ACS Applied Electronic Materials
Abstract:Resistive switching in multiferroics has attracted increasing attention due to the potential application for next-generation nonvolatile memory and could lead to forms of computing. However, the resistive switching mechanism in solid solution oxides is unclear. In this article, we have successfully fabricated binary 0.72BiTi<sub>0.27</sub>Fe<sub>0.46</sub>Mg<sub>0.27</sub>O<sub>3</sub>-0.28LaFeO<sub>3</sub> (BTFM-LFO) and ternary 0.625BiTi<sub>0.27</sub>Fe<sub>0.46</sub>Mg<sub>0.27</sub>O<sub>3</sub>-0.25LaFeO<sub>3</sub>-0.125La<sub>2</sub>MgTiO<sub>6</sub> (BTFM-LFO-LMT) thin films with precise component control by the spin coating method. The solid solution films exhibit obvious ferroelectricity and magnetism at room temperature. Both binary and ternary solid solution films show switchable polarization, weak magnetism, and reversible and repeatable resistive switching effects. Multistage resistive switching behavior was observed. Four resistive switching states were obtained in the binary film; the highest <i>I</i><sub>on/off</sub> is up to 10<sup>6</sup>. The influence of the film composition on the resistive switching effect was discussed. It is considered that the oxide vacancy/valance exchange-induced defects play a dominant role in the resistive switching effect of complex oxide thin films. This work provides an alternative pathway to explore the resistive switching in multiferroic oxides by fabrication of complex solid solution films.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.1c00465?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.1c00465</a>.SEM images of the cross-section of BTFM-LFO and BTFM-LFO-LMT films and frequency dependence of the relative dielectric permittivity and dielectric loss for the BTFM-LFO and BTFM-LFO-LMT films (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.1c00465/suppl_file/el1c00465_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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