Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States
Ming Liu,Tianxiang Nan,Jia-Mian Hu,Shi-Shun Zhao,Ziyao Zhou,Chen-Ying Wang,Zhuang-De Jiang,Wei Ren,Zuo-Guang Ye,Long-Qing Chen,Nian X Sun
DOI: https://doi.org/10.1038/am.2016.139
IF: 10.761
2016-01-01
NPG Asia Materials
Abstract:In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics.